參數(shù)資料
型號: OPA646
廠商: Texas Instruments, Inc.
英文描述: Low Power, Wide Bandwidth Operational Amplifier(低功耗寬帶運算放大器)
中文描述: 低功耗,寬帶運算放大器(低功耗寬帶運算放大器)
文件頁數(shù): 3/13頁
文件大小: 155K
代理商: OPA646
OPA646
3
1
2
3
4
8
7
6
5
+V
S2(1)
+V
S1
Output
–V
S2(1)
NC
Inverting Input
Non-Inverting Input
–V
S1
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
Top View
SO-8
NOTE: (1) Making use of all four power supply pins is highly recommended,
although not required. Using these four pins, instead of just pins 4 and 7, will
lower the effective pin impedance and substantially lower distortion.
Power Supply ..............................................................................
±
5.5VDC
Internal Power Dissipation .......................... See Thermal Considerations
Differential Input Voltage ..................................................................
±
1.2V
Input Voltage Range............................................................................
±
V
S
Storage Temperature Range: U, UB ............................ –40
°
C to +125
°
C
Lead Temperature (soldering, 10s).............................................. +300
°
C
(soldering, SO-8 3s) ....................................... +260
°
C
Junction Temperature (T
J
)............................................................ +175
°
C
PACKAGE/ORDERING INFORMATION
PACKAGE DRAWING
NUMBER
(1)
PRODUCT
PACKAGE
OPA646U, UB
SO-8 Surface Mount
182
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book. (2) The “B” grade of the
SO-8 will be marked with a “B” by pin 8.
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
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