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參數(shù)資料
| 型號(hào)： | OP803TX |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | Hi-Reliability NPN Sil icon Phototransistor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | HERMETIC, TO-18,3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | OP803TX |
@TOPICS =
Optek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Optek Tech nol ogy, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV
Elec ri cal Char ac er s ics (T
A
= 25
o
C un ess oth er wise noted)
Sym bol
Pa am e er
Min
Typ
Max
Units
Test Con di ions
I
C(on)
On-State Collector Current
OP803TX,TXV
OP804TX,TXV
OP805TX,TXV
4.0
7.0
15.0
8.0
22.0
mA
mA
mA
V
CE
= 5.0 V, E
e
= 5.0 mW/cm
2(3)
V
CE
= 5.0 V, E
e
= 5.0 mW/cm
2(3)
V
CE
= 5.0 V, E
e
= 5.0 mW/cm
2(3)
I
CEO
Collector-Emitter Dark Current
100
100
nA
μ
A
V
CE
= 10.0 V, E
e
= 0
V
CE
= 10.0 V, E
e
= 0, T
A
= 100
o
C
V
(BR)CBO
Collector-Base Breakdown Voltage
30
V
I
C
= 100
μ
A, I
E
= 0, E
e
= 0
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
I
C
= 100
μ
A, I
B
= 0, E
e
= 0
V
(BR)EBO
Emitter-Base Breakdown Voltage
5.0
V
I
E
= 100
μ
A, I
C
= 0, E
e
= 0
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.40
V
I
C
= 0.4 mA, E
e
= 5.0 mW/cm
2(3)
t
r
Rise TimeOP804TX,TXV
OP805TX,TXV
10.0
15.0
μ
s
V
CC
= 30 V, I
C
= 1.00 mA,
R
L
= 100
t
f
Fall TimeOP804TX,TXV
OP805TX,TXV
10.0
15.0
μ
s
(3) Light source is an un il ered tung sten lamp op er ated at a tem per a ure of 2870 K.
13-35
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PDF描述 |
|---|---|
| OP804TX | Hi-Reliability NPN Sil icon Phototransistor |
| OP830SL | NPN Silicon Photodarlington(NPN達(dá)林頓光晶體管,集電極最小電流15mA,可替代OP830和K9020) |
| OP830WSL | NPN Silicon Photodarlington(NPN達(dá)林頓光晶體管,集電極最小電流4mA,可替代OP830W和K9030) |
| OP844W | NPN Silicon Phototransistors |
| OP845W | NPN Silicon Phototransistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP803TXV | 功能描述:光電晶體管 TO-18, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP804 | 制造商:OPTEK 制造商全稱:OPTEK 功能描述:NPN Silicon Phototransistors |
| OP804SL | 功能描述:光電晶體管 PHOTOSENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP804SL | 制造商:TT Electronics / OPTEK Technology 功能描述:PHOTOSENSOR PHOTOTRANSISTOR OuTPuT IRR |
| OP804TX | 功能描述:光電晶體管 TO-18, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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