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參數(shù)資料
| 型號： | OP770A |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | NPN Pho totransistor with Collector- Emitter Capacitor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 94K |
| 代理商： | OP770A |
Types OP770A, OP770B, OP770C, OP770D
Elec tri cal Char ac ter s tics
(T
A
= 25
o
C un less oth er wise noted)
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
SYM BOL
PA RAME TER
MIN
TYP MAX UNITS
TEST CON DI TIONS
I
C(ON)
On-State Collector Current
OP770D
OP770C
OP770B
OP770A
0.85
0.85
1.50
2.25
7.00
2.80
4.20
7.00
mA
V
CE
= 5.0 V, E
e
= 1.0 mW/cm
2(3)
I
C
/
T
Relative IC Changes with Temperature
100
%/
°
C
V
CE
= 5.0 V, E
e
= 1.0 mW/cm
2
,
λ
= 935 nm
I
CEO
Collector Dark Current
100
nA
V
CE
= 10.0 V, E
e
= 0
I
E
= 100
μ
A
I
C
= 100
μ
A, E
e
= 1.0 mW/cm
2(3)
V
R
= 0
V
(BR)ECO
V
CE(SAT)
Emitter-Collector Breakdown Voltage
5.0
V
Collector-Emitter Saturation Voltage
0.40
V
C
CE
Capacitance
1000
pF
Typi cal Per form ance Curves
R
L
- Load Resistance - K
160
140
120
100
80
60
40
20
0
0
2
OP770
4
6
8
10
VCC = 5 V
VRL = 1 V
f = 100 Hz
PW = 1 mS
LED = GaAIAs,
λ
= 890
nm
OP550
Typical Rise and Fall Time
vs. Load Resistance
Normalized Output
vs. Frequency
Frequency - KHz
OP770
VRL = 1 V
VCE = 5 V
50% Duty Cycle
RL = 10 K
OP550
1.00
.75
.50
.25
0.0
1
10
100
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP770B | NPN Pho totransistor with Collector- Emitter Capacitor |
| OP770C | NPN Pho totransistor with Collector- Emitter Capacitor |
| OP770D | NPN Pho totransistor with Collector- Emitter Capacitor |
| OP775A | NPN Phototransistor with Collector- Emitter Capacitor |
| OP775B | NPN Phototransistor with Collector- Emitter Capacitor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP770B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP770C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP770D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP775A | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP775B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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