參數(shù)資料
型號(hào)： OP520
廠商： OPTEK TECHNOLOGY INC
元件分類(lèi)： 光敏三極管
英文描述： SMD Silicon Phototransistor
中文描述： PHOTO TRANSISTOR DETECTOR
封裝： ROHS COMPLIANT, MINIATURE, SMD, 2 PIN
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 289K
代理商： OP520
SMD Silicon Phototransistor
OP520, OP521
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range
-40° C to +85° C
Operating Temperature Range
-25° C to +85° C
260° C
(1)
Lead Soldering Temperature
Collector-Emitter Voltage
30 V
Collector Current
20 mA
75 mW
(2)
Power Dissipation
Emitter-Collector Voltage
5 V
Notes:
1.
2.
Solder time less than 5 seconds at temperature extreme.
De-rate linearly at 2.17 mW/° C above 25° C.
3.
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
To Calculate typical collector dark current in μA, use the formula I
CEO
= 10
(0.04Ta-3.4)
where Ta is the ambient temperature in ° C.
4.
R
Relative On-State Collector
Current vs. Irradiance
0
1.0
2.0
3.0
4.0
Ee—Irradiance (mW/cm
2
)
R
80%
100%
120%
140%
160%
Relative On-State Collector Current
vs. Temperature
-25
0
25
50
75
100
Temperature—(
°
C)
-40
°
C
80
°
C
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
SYMBOL
PARAMETER
TYP
MAX
UNITS
CONDITIONS
I
C(ON)
On-State Collector Current
mA
V
CE
= 5.0V, E
e
= 5.0mW/cm
2 (3)
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.4
V
I
C
= 100μA, E
e
= 5.0mW/cm
2 (3)
I
CEO
Collector-Emitter Dark Current
100
nA
V
CE
= 5.0V, E
e
= 0
(4)
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
I
C
= 100μA, E
e
= 0
V
(BR)ECO
Emitter-Collector Breakdown Voltage
V
I
E
= 100μA, E
e
= 0
MIN
0.25
30
5
t
r
, t
f
Rise and Fall Times
15
μs
I
C
= 1mA, R
L
= 1K
60%
40%
5.0
6.0
7.0
90%
100%
110%
120%
130%
80%
70%
140%
8.0
20%
Normalized at E
e
= 5mW/cm
2
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25
°
C
Normalized at T
A
= 25
°
C .
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25
°
C
相關(guān)PDF資料
PDF描述
OP522 Silicon Phototransistor in Miniature SMT Package
OP535A NPN SILICON PHOTODARLINGTON
OP535B NPN SILICON PHOTODARLINGTON
OP535C NPN SILICON PHOTODARLINGTON
OP538 NPN SILICON PHOTODARLINGTON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
OP-520 功能描述:LENS 20MM SER OVAL OPTIC 5X20DEG RoHS:是 類(lèi)別:光電元件 >> 光學(xué) - LED，燈 - 透鏡 系列:OP5 標(biāo)準(zhǔn)包裝:120 系列:CMC 類(lèi)型:透鏡，帶支座 顏色:透明 LED 數(shù)目:1 適用于相關(guān)產(chǎn)品:Cree MC-E 透鏡樣式/尺寸:方形，帶平頂，21.60mm 光學(xué)圖形:平滑定點(diǎn) 視角:- 安裝類(lèi)型:膠合劑
OP5-20 功能描述:LENS 20MM SER OVAL OPTIC 5X20DEG RoHS:是 類(lèi)別:光電元件 >> 光學(xué) - LED，燈 - 透鏡 系列:* 標(biāo)準(zhǔn)包裝:120 系列:CMC 類(lèi)型:透鏡，帶支座 顏色:透明 LED 數(shù)目:1 適用于相關(guān)產(chǎn)品:Cree MC-E 透鏡樣式/尺寸:方形，帶平頂，21.60mm 光學(xué)圖形:平滑定點(diǎn) 視角:- 安裝類(lèi)型:膠合劑
OP520DA 功能描述:光電晶體管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
OP521 功能描述:光電晶體管 Phototrans Clear RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
OP521 制造商:TT Electronics / OPTEK Technology 功能描述:Transistor
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*