參數(shù)資料
型號： OP266W
廠商： OPTEK TECHNOLOGY INC
元件分類： 紅外LED
英文描述： Plastic Infrared Emitting Diode
中文描述： 3 mm, 1 ELEMENT, INFRARED LED, 890 nm
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù)： 3/4頁
文件大?。?/td> 345K
代理商： OP266W
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 07/06
Page 3 of 4
Plastic Infrared Emitting Diode
OP265, OP266 Series
(A, B, C, D, W)
Notes:
1. RMA flux is recommended. Duration can be extended to 10 second maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. E
E(APT)
is a measurement of the average apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular
to and centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. E
E(APT)
is not necessarily
uniform within the measured area.
Absolute Maximum Ratings
(T
A
= 25° C unless otherwise noted)
Storage and Operating Temperature Range
-40
o
C to +100
o
C
Reverse Voltage
2.0 V
Continuous Forward Current
50 mA
Peak Forward Current (1 μs pulse width, 300 pps)
3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
260° C
(1)
Power Dissipation
100 mW
(2)
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX UNITS
TEST CONDITIONS
Input Diode
E
E (APT)
Apertured Radiant Incidence
OP265A, OP266A
OP265B, OP266B
OP265C, OP266C
OP265D, OP266D
2.70
1.65
0.54
0.54
-
-
-
-
-
4.70
3.30
-
mW/cm
2
I
F
= 20 mA
(3)
P
O
Radiant Power Output
OP265, OP266 (A, B, C, D)
OP265W, OP266W
-
1.00
-
-
-
-
mW
I
F
= 20 mA
V
F
Forward Voltage
-
-
1.80
V
I
F
= 20 mA
I
R
Reverse Current
-
-
100
μA
V
R
= 2 V
λ
P
Wavelength at Peak Emission
-
890
-
nm
I
F
= 10 mA
B
Spectral Bandwidth between Half Power
Points
-
80
-
nm
I
F
= 10 mA
λ
P
/
T
Spectral Shift with Temperature
OP265, OP266 (A, B, C, D)
OP265W, OP266W
-
-
±0.30
±0.18
-
-
nm/°C I
F
= Constant
θ
HP
Emission Angle at Half Power Points
OP265, OP266 (A, B, C, D)
OP265W, OP266W
-
-
18
90
-
-
Degree I
F
= 20 mA
t
r
Output Rise Time
-
500
-
ns
t
f
Output Fall Time
-
250
-
ns
I
F(PK)
=100 mA, PW=10 μs, D.C.=10.0%
相關PDF資料
PDF描述
OP265 GAAIAS PLASTIC INFRARED EMITTING DIODE
OP265W STEEL COVER
OP266A GAAIAS PLASTIC INFRARED EMITTING DIODES
OP266B GAAIAS PLASTIC INFRARED EMITTING DIODES
OP266C GAAIAS PLASTIC INFRARED EMITTING DIODES
相關代理商/技術參數(shù)
參數(shù)描述
OP268FA 功能描述:紅外發(fā)射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
OP268FB 功能描述:紅外發(fā)射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
OP268FC 功能描述:紅外發(fā)射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
OP268FPS 功能描述:紅外發(fā)射源 Point Source 850nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
OP269 制造商:OPTEK 制造商全稱:OPTEK 功能描述:GAALAS PLASTIC INFRARED EMITTING DIODES
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