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參數(shù)資料
| 型號： | OP224TXV |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 紅外LED |
| 英文描述： | Hi-Reliability GaAIAs Infrared Emitting Diode |
| 中文描述： | 1.02 mm, 1 ELEMENT, INFRARED LED, 890 nm |
| 封裝： | MINIATURE, HERMETICALLY SEALED, PILL PACKAGE-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 453K |
| 代理商： | OP224TXV |
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Phone: (972) 323-2200 or (800) 341-4747
Issue A.2 07/06
Page 2 of 3
Hi-Reliability GaAIAs Infrared Emitting Diode
OP223, OP224 (TX, TXV)
OP224 (S)
Absolute Maximum Ratings
(T
A
= 25° C unless otherwise noted)
Storage Temperature Range
-65
o
C to +150
o
C
Operating Temperature Range
-55
o
C to +125
o
C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
(1)
260° C
Reverse Voltage
2.0 V
Continuous Forward Current
100 mA
Power Dissipation
(2)
100 mW
Notes:
1. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 1.00 mW/° C above 25° C.
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX UNITS
TEST CONDITIONS
Input Diode
E
E (APT)
Radiant Power Output
OP223 (TX, TXV)
OP224 (S, TX, TXV)
1.00
1.50
-
-
-
-
mW
I
F
= 50 mA
I
F
= 50 mA
V
F
Forward Voltage
0.80
-
1.80
V
I
F
= 50 mA
I
R
Reverse Current
-
-
100
μA
V
R
= 2.0 V
λ
P
Wavelength at Peak Emission
-
890
-
nm
I
F
= 50 mA
B
Spectral Bandwidth between Half Power
Points
-
80
-
nm
I
F
= 50 mA
λ
P
/
T
Spectral Shift with Temperature
-
0.18
-
nm/°C I
F
= Constant
θ
HP
Emission Angle at Half Power Points
-
18
-
Degree I
F
= 50 mA
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