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參數(shù)資料
| 型號(hào)： | OP140C |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs Plastic Infrared Emitting Diodes |
| 中文描述： | 1.58 mm, 1 ELEMENT, INFRARED LED, 935 nm |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | OP140C |
Fea ures
Wide irradiance pattern
Selected to specific on-line intensity
ranges
Low cost, miniature plastic side-
looking package
Mechanically and spectrally matched
to the OP550 series of
phototransistors and the OP560 series
of photodarlingtons
De scrip ion
The OP140 series devices are 935nm
high intensity gallium arsenide infrared
emitting diodes molded in IR
transmissive plastic side-looking
packages. The side looking packages
are for use in PC board mounted slotted
switches or as an easy mount PC board
interrupter.
Re places
OP140SL series
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Con inu ous For ward Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur ent (1
μ
s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.33 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average apertured radiant incidence upon a sensing area
0.180" (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the
lens and 0.653" (16.6 mm) from the lens tip. E
e(APT)
is not necessarily uniform within the
measured area.
Prod uct Bul e in OP140A
May 1996
GaAs Plas ic In ra ed Emit ing Di odes
Types OP140A, OP140B, OP140C, OP140D
2-10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP140D | GaAs Plastic Infrared Emitting Diodes |
| OP145A | GaAs Plastic Infrared Emitting Diodes |
| OP145B | GaAs Plastic Infrared Emitting Diodes |
| OP145C | GaAs Plastic Infrared Emitting Diodes |
| OP145D | GaAs Plastic Infrared Emitting Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP140D | 功能描述:紅外發(fā)射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP141A | 功能描述:紅外發(fā)射源 Infrared 935nm 828-OP141B RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP141B | 功能描述:紅外發(fā)射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP141C | 功能描述:紅外發(fā)射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP142/883C | 制造商:Analog Devices 功能描述: |
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