參數(shù)資料
型號： OMS510
廠商： Electronic Theatre Controls, Inc.
英文描述： 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE
中文描述： 3相，低電壓，低的RDS（on）MOSFET的電橋電路在一個塑料包裝
文件頁數(shù)： 2/4頁
文件大小： 49K
代理商： OMS510
2.1 - 54
OMS410, OMS410A, OMS510
2.1
ELECTRICAL CHARACTERISTICS:
OMS410
(T
C
= 25° unless otherwise specified)
Test Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 μA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
BRDSS
I
DSS
100
-
-
V
-
-
10
μA
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
-
-
100
μA
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
V
GSth
R
DSon
2.0
-
4.0
V
-
-
0.058
-
-
0.1
I
Don
15
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 9.0 A,
g
fs
C
iss
C
oss
C
rss
9.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
-
-
2600
pF
Output Capacitance
-
-
910
pF
Reverse Transfer Capacitance
-
-
350
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
don
t
r
t
doff
t
f
-
-
35
ns
Rise Time
V
DD
= 100 V, I
D
=
15 A,
R
GS
= 10 , V
GS
= 10 V
-
-
290
ns
Turn-Off Delay Time
-
-
85
ns
Fall Time
-
-
120
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
14
A
Source - Drain Current (Pulsed)
-
-
56
A
Forward On-Voltage
I
SD
= 28 A, V
GS
= 0,
-
-
2.5
V
Reverse Recovery Time
I
SD
= 13 A, di/dt = 100 A/μSec
-
133
-
ns
Reverse Recovered Charge
-
0.85
-
μC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
T
cr
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
-
100
-
ppm
* Indicates Pulse Test 300 μsec, Duty Cycle 1.5%
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
OMS410
OMS410A
OMS510
Units
V
DS
Drain-Source Voltage
100
100
100
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 m )
100
100
100
V
I
D
@ T
C
= 25°C
Continuous Drain Current
15
20
45
A
I
D
@ T
C
= 70°C
Continuous Drain Current
11
16
45
A
I
DM
Pulsed Drain Current
1
110
110
180
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
2
33
33
66
W
P
D
@ T
C
= 70°C
Maximum Power Dissipation
2
18
18
36
W
Junction-To-Case Linear Derating Factor
0.33
0.33
0.66
W/°C
Thermal Resistance Junction-To-Case
3.0
3.0
1.5
°C/W
Sense Resistor
0.010
0.010
0.010
Ohms
Note 1:
Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2:
Maximum Junction Temperature equal to 125°C.
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