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參數(shù)資料
| 型號(hào)： | OMS425 |
| 英文描述： | 250V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| 中文描述： | 250V高可靠性多芯片MOSFET的三相橋模塊的型號(hào)：MP - 3封裝 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | OMS425 |
2.1 - 62
2.1
OMS425, OMS525, OMS625
ELECTRICAL CHARACTERISTICS:
OMS425
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 μA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
BRDSS
I
DSS
250
-
-
V
-
-
10
μA
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
-
-
100
μA
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
V
GSth
R
DSon
2.0
-
4.0
V
-
-
0.11
-
-
0.19
I
Don
15
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 11.5 A,
g
fs
C
iss
C
oss
C
rss
11
-
-
mho
Input Capacitance
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
-
-
4340
pF
Output Capacitance
-
-
810
pF
Reverse Transfer Capacitance
-
-
320
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
don
t
r
t
doff
t
f
-
-
50
ns
Rise Time
V
DD
= 125 V, I
D
=
15 A,
R
GS
= 9.1 , V
GS
= 10 V
-
-
240
ns
Turn-Off Delay Time
-
-
150
ns
Fall Time
-
-
182
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
15
A
Source - Drain Current Pulsed
-
-
56
A
Forward On-Voltage
I
SD
= 15 A, V
GS
= 0,
-
-
1.3
V
Reverse Recovery Time
I
SD
= 15 A, di/dt = 100 A/μSec
-
300
-
ns
Reverse Recovered Charge
-
3.5
-
μC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
T
cr
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
-
100
-
ppm
* Indicates Pulse Test 300 μsec, Duty Cycle 1.5%
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
OMS425
OMS525
OMS625
Units
V
DS
Drain-Source Voltage
250
250
250
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 m )
250
250
250
V
I
D
@ T
C
= 25°C
Continuous Drain Current
15
20
45
A
I
D
@ T
C
= 70°C
Continuous Drain Current
15
16.6
38
A
I
DM
Pulsed Drain Current
1
56
69
80
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
2
50
50
100
W
P
D
@ T
C
= 70°C
Maximum Power Dissipation
2
27.5
27.5
55
W
Junction-To-Case Linear Derating Factor
0.5
0.5
1.0
W/°C
Thermal Resistance Junction-To-Case
2.0
2.0
1.0
°C/W
Note 1:
Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2:
Maximum Junction Temperature equal to 125°C.
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PDF描述 |
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| OMS625 | 250V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
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