- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383683 > OMS410A (Electronic Theatre Controls, Inc.) 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE PDF資料下載
參數(shù)資料
| 型號(hào)： | OMS410A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE |
| 中文描述： | 3相，低電壓，低的RDS（on）MOSFET的電橋電路在一個(gè)塑料包裝 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | OMS410A |
2.1 - 55
OMS410, OMS410A, OMS510
2.1
ELECTRICAL CHARACTERISTICS:
OMS520
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 μA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
(BRDSS
I
DSS
100
-
-
V
-
-
10
μA
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
-
-
100
μA
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 10 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
V
GS(th)
R
DS(on)
2.0
-
4.0
V
-
-
0.058
-
-
0.100
I
D(on)
20
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 10 A
g
fs
C
iss
C
oss
C
rss
9.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
-
-
2600
pF
Output Capacitance
-
-
910
pF
Reverse Transfer Capacitance
-
-
350
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
-
-
35
ns
Rise Time
V
DD
= 100 V, I
D
=
20 A,
R
GS
= 10 , V
GS
= 10 V
-
-
290
ns
Turn-Off Delay Time
-
-
85
ns
Fall Time
-
-
120
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
20
A
Source - Drain Current (Pulsed)
I
SD
= 28 A, V
GS
= 0,
I
SD
= 20 A,
di/dt = 100 A/μSec
-
-
56
A
Forward On-Voltage
-
-
2.5
V
Reverse Recovery Time
-
133
-
ns
Reverse Recovered Charge
-
0.85
-
μC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
T
cr
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
-
100
-
ppm
* Indicates Pulse Test 300 μsec, Duty Cycle 1.5%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OMS420 | 200V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS420A | 200V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS520 | 200V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS525 | TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 250V V(BR)DSS | 20A I(D) |
| OMS425 | 250V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OMS420 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS420A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS425 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:250V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS50F60FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) |
| OMS510 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。