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參數(shù)資料
| 型號(hào)： | OMD50F60FL |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|全橋| 600V的五（巴西）國(guó)際消費(fèi)電子展| 75A條一（c） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | OMD50F60FL |
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR
@ 25°C
3.1 - 1
3.1
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
4 11 R2
Supersedes 1 07 R1
FOUR N-CHANNEL MOSFETS IN HERMETIC
POWER PACKAGE
OMD400
OMD500
OMD100
OMD200
PART NUMBER
OMD100
OMD200
OMD400
OMD500
V
DS
100V
200V
400V
500V
R
DS(on)
.08
.11
.35
.43
I
D
25A
25A
13A
11A
SCHEMATIC CONNECTION DIAGRAM
D
S
G
FET 1
D
S
G
FET 3
D
S
G
FET 3
D
S
G
FET 4
.150
1.520
.260
.625
.125
.187
SQ.
.04DIA.
.500
.1TYP.
.050
.270
.TYP.
45°
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