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參數(shù)資料
| 型號(hào)： | OM75N06SA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
| 中文描述： | 低電壓，低的RDS（on）在朗格隔離封裝功率MOSFET |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | OM75N06SA |
3
O
3
OM60N10SC
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
I
AR
Avalanche Current
Min.
Typ. Max. Units Test Conditions
60
A
(repetitive or
non-repetitive,T
J
= 25°C)
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
(pulse width limited
by T
j max
,
d
< 1%)
(repetitive or
non-repetitive, T
J
= 100°C)
E
AS
Single Pulse Avalanche Energy
720
mJ
E
AR
Repetitive Avalanche Energy
100
mJ
I
AR
Avalanche Current
37
A
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
GSS
Gate-Body Leakage
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On
Resistance
I
D(on)
On State Drain Current
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
t
r
Rise Time
(di/dt)
on
Turn-On Current Slope
100
V
I
D
= 250 μA, V
GS
= 0
250
1000
±100
μA
μA
nA
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
2
4
V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
0.025
0.05
60
A
25
S
pF
pF
pF
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
4000
1100
250
90
270
270
nS
nS
A/μS
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
Q
g
Total Gate Charge
120
nC
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
t
f
Fall Time
t
cross
Cross-Over Time
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
I
SDM
*
Source Drain Current (pulsed)
V
SD
Forward On Voltage
t
rr
Reverse Recovery Time
200
210
410
nS
nS
nS
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
60
240
1.6
A
A
V
nS
I
SD
= 60 A, V
GS
= 0
I
SD
= 60 A, di/dt = 100 A/μs
V
R
= 80 V
180
Q
rr
I
RRM
*Pulsed: Pulse Duration 300μS, Duty Cycle 1.5%.
Reverse Recovery Charge
Reverse Recovery Current
1.8
10
μC
A
OM55N10SC
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
I
AR
Avalanche Current
Min.
Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
(pulse width limited
by T
j max
,
d
< 1%)
(repetitive or
non-repetitive, T
J
= 100°C)
E
AS
Single Pulse Avalanche Energy
600
mJ
E
AR
Repetitive Avalanche Energy
100
mJ
I
AR
Avalanche Current
37
A
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
GSS
Gate-Body Leakage
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On
Resistance
I
D(on)
On State Drain Current
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
t
r
Rise Time
(di/dt)
on
Turn-On Current Slope
100
V
I
D
= 250 μA, V
GS
= 0
250
1000
±100
μA
μA
nA
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
2
4
V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
0.03
0.06
55
A
25
S
pF
pF
pF
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
4000
1100
250
90
270
270
nS
nS
A/μS
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
Q
g
Total Gate Charge
120
nC
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
t
f
Fall Time
t
cross
Cross-Over Time
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
I
SDM
*
Source Drain Current (pulsed)
V
SD
Forward On Voltage
t
rr
Reverse Recovery Time
200
210
410
nS
nS
nS
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
55
220
1.5
A
A
V
nS
I
SD
= 55 A, V
GS
= 0
I
SD
= 55 A, di/dt = 100 A/μs
V
R
= 80 V
180
Q
rr
I
RRM
*Pulsed: Pulse Duration 300μS, Duty Cycle 1.5%.
Reverse Recovery Charge
Reverse Recovery Current
1.8
11
μC
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM75N06SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
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| OM7600/BGA2001/180,598 | 制造商:NXP Semiconductors 功能描述:GENERAL PURPOSE WIDEBAND AMPLIFIER (50 OHM GAIN BLOCK) - Boxed Product (Development Kits) |
| OM7600/BGA2001/1800 | 功能描述:EVAL BOARD FOR BGA2001 RoHS:否 類別:RF/IF 和 RFID >> RF 評(píng)估和開(kāi)發(fā)套件，板 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:GPS 接收器 頻率:1575MHz 適用于相關(guān)產(chǎn)品:- 已供物品:模塊 其它名稱:SER3796 |
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