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參數(shù)資料
| 型號： | OM6239SD |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 200V V(BR)DSS | 14A I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 200伏五（巴西）直|第14A條（?。﹟雙酯 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | OM6239SD |
3.1 - 125
OM6227SS - OM6233SS
3.1
ABSOLUTE MAXIMUM RATINGS PER MOSFET
(T
C
= 25°C unless otherwise noted)
OM6227/
OM6231
OM6228/
OM6232
OM6230/
OM6233
Parameter
Units
V
DS
Drain-Source Voltage
400
500
1000
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
400
500
1000
V
I
D
@ T
C
= 25°C
Continuous Drain Current
24
22
10
A
I
DM
Pulsed Drain Current
92
85
30
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
165
165
165
W
P
D
Derate Above 25°C Case
1.31
1.31
1.31
W/°C
W
DSS
(1)
Single Pulse Energy
Drain-To-Source @ 25°C
1000
1000
500
mJ
T
J
Operating and
T
stg
Storage Temperature Range
-55 to +150
-55 to +150
-55 to +150
°C
Lead Temperature
(1/8" from case for 5 secs.)
275
275
275
°C
THERMAL RESISTANCE
(Maximum) at T
A
= 25°C
R
thJC
Junction-to-Case
.76
°C/W
R
thJA
Junction-to-Ambient
35
°C/W
Free Air Operation
ELECTRICAL CHARACTERISTICS:
1000V (Per MOSFET)
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Characteristic
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
V
(BR)DSS
I
DSS
1000
-
-
Vdc
m
Adc
(V
DS
= 1000 V, V
GS
= 0)
(V
DS
= 1000 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
*
-
-
10
-
-
100
I
GSSF
I
GSSR
-
-
100
nAdc
-
-
100
nAdc
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 5 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 10 A)
(I
D
= 5 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 5 Adc)
DYNAMIC CHARACTERISTICS
2.0
3.0
4.0
1.5
-
3.5
r
DS(on)
V
DS(on)
-
-
1.3
Ohm
Vdc
-
-
15
-
-
15.3
g
FS
5.0
-
-
mhos
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
-
5500
-
pF
Output Capacitance
-
530
-
Transfer Capacitance
SWITCHING CHARACTERISTICS
-
90
-
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
60
-
ns
Rise Time
(V
DD
= 500 V, I
D
= 10 A,
R
gen
= 9.1 ohms
V
GS
= 10 V)
(V
DS
= 400 V, I
D
= 10 A,
V
GS
= 10 V)
-
115
-
Turn-Off Delay Time
-
240
-
Fall Time
-
140
-
Total Gate Charge
-
140
-
-nC
Gate-Source Charge
-
-
-
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS
-
-
-
Forward On-Voltage
V
SD
t
on
t
rr
-
-
1.1
Vdc
Forward Turn-On Time
(I
S
= 10 A, d/dt = 100 A/μs)
**
600
ns
Reverse Recovery Time
-
1100
* Indicates Pulse Test = 300 μsec, Duty Cycle = 2%
** Limited by circuit inductance
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| OM6239SDM | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 200V V(BR)DSS | 14A I(D) | DIP |
| OM6240SD | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | DIP |
| OM6240SDM | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | DIP |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM6239SDM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 200V V(BR)DSS | 14A I(D) | DIP |
| OM6240SD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | DIP |
| OM6240SDM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | DIP |
| OM6241SD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | DIP |
| OM6241SDM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | DIP |
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