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參數(shù)資料
| 型號： | OM6234SDM |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 100V的五（巴西）直|第14A條（?。﹟雙酯 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | OM6234SDM |
3
O
3
UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS
(T
J
< 150°)
Symbol
Value
1000
160
25
Unit
Single Pulse Drain-To-Source Avalanche Energy
T
J
= 25°C
T
J
= 100°C
W
DSS
(1)
mJ
Repetitive Pulse Drain-To-Source Avalanche Energy
W
DSS
(2)
(1) V
DD
= 50V, I
D
= 10A
(2) Pulse width and frequency is limited by T
J(max)
and thermal response.
ELECTRICAL CHARACTERISTICS:
400V (Per MOSFET)
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Characteristic
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
V
(BR)DSS
I
DSS
400
-
-
Vdc
mAdc
(V
DS
= 400 V, V
GS
= 0)
(V
DS
= 320 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
*
-
-
0.25
-
-
1.0
I
GSSF
I
GSSR
-
-
100
nAdc
-
-
100
nAdc
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 13 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 24 A)
(I
D
= 12 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 12A Adc)
DYNAMIC CHARACTERISTICS
2.0
3.0
4.0
1.5
-
3.5
r
DS(on)
V
DS(on)
-
-
0.20
Ohm
Vdc
-
-
5.0
-
-
5.0
g
FS
14
-
-
mhos
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
-
4000
-
pF
Output Capacitance
-
550
-
Transfer Capacitance
SWITCHING CHARACTERISTICS
-
110
-
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
35
-
ns
Rise Time
(V
DD
= 250 V, I
D
= 24 A,
R
gen
= 4.3 ohms)
-
95
-
Turn-Off Delay Time
-
80
-
Fall Time
-
80
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 24 A,
V
GS
= 10 V)
-
110
14
0nC
Gate-Source Charge
-
20
-
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS
-
80
-
Forward On-Voltage
V
SD
t
on
t
rr
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 24 A, d/dt = 100 A/μs)
**
500
ns
Reverse Recovery Time
-
1000
ELECTRICAL CHARACTERISTICS:
500V (Per MOSFET)
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Characteristic
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
V
(BR)DSS
I
DSS
500
-
-
Vdc
mAdc
(V
DS
= 500 V, V
GS
= 0)
(V
DS
= 500 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
*
-
-
0.25
-
-
1.0
I
GSSF
I
GSSR
-
-
100
nAdc
-
-
100
nAdc
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 13 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 24 A)
(I
D
= 12 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 13 Adc)
DYNAMIC CHARACTERISTICS
2.0
3.0
4.0
1.5
-
3.5
r
DS(on)
V
DS(on)
-
-
0.27
Ohm
Vdc
-
-
8.0
-
-
8.0
g
FS
13
-
-
mhos
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
-
4000
-
pF
Output Capacitance
-
480
-
Transfer Capacitance
SWITCHING CHARACTERISTICS
-
95
-
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
32
-
ns
Rise Time
(V
DD
= 250 V, I
D
= 24 A,
R
gen
= 4.3 ohms)
-
95
-
Turn-Off Delay Time
-
75
-
Fall Time
-
75
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 24 A,
V
GS
= 10 V)
-
115
140
nC
Gate-Source Charge
-
20
-
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS
-
60
-
Forward On-Voltage
V
SD
t
on
t
rr
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 24 A, d/dt = 100 A/μs)
**
500
ns
Reverse Recovery Time
-
1000
* Indicates Pulse Test = 300 μsec, Duty Cycle = 2%
** Limited by circuit inductance
* Indicates Pulse Test = 300 μsec, Duty Cycle = 2%
** Limited by circuit inductance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM6234SMM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | SO |
| OM6235SD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | DIP |
| OM6235SDM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | DIP |
| OM6236SD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | DIP |
| OM6236SDM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | DIP |
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