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參數(shù)資料
| 型號： | OM6217SS |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE |
| 中文描述： | 兩個功率MOSFET在朗格離體SIP封裝 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | OM6217SS |
OM6214SS - OM6217SS
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
OM6214SS OM6215SS OM6216SS OM6217SS Units
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25°C
Continuous Drain Current
± 30
± 25
± 15
± 13
A
I
D
@ T
C
= 100°C
Continuous Drain Current
± 20
± 16
± 9
± 8
A
I
DM
Pulsed Drain Current
1
± 140
± 100
± 60
± 52
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
125
125
125
125
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1
1.0
1.0
1.0
1.0
W/°C
Junction To Ambient Linear Derating Factor
.025
.025
.025
.025
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150 -55 to 150
-55 to 150
°C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 2%.
THERMAL RESISTANCE
(Per FET at T
A
= 25°C)
R
thJC
Junction-to-Case
1.0
°C/W
R
thJA
Junction-to-Ambient
40
°C/W
Free Air Operation
POWER DERATING (Per Device)
MECHANICAL OUTLINE
.140 TYP.
.200 TYP.
.270
MAX.
.060 DIA.TYP.
6 PLACES
1.375
.500
MIN.
.302
.265
.487
.752
REF.
.118
.150 DIA.
THRU 2
PLACES
.040
.770
1.000
.188
REF.
180
150
120
90
60
30
0
0
25
T
C
- CASE TEMPERATURE ( °C)
50
75
100
125 150 175
P
D
-
R
q
JC
= 1.0°C/W
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