參數(shù)資料
型號(hào)： OM6215SS
廠商： Electronic Theatre Controls, Inc.
英文描述： TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
中文描述： 兩個(gè)功率MOSFET在朗格離體SIP封裝
文件頁數(shù)： 2/4頁
文件大?。?/td> 43K
代理商： OM6215SS
3
O
3
ELECTRICAL CHARACTERISTICS:
T
= 25° unless otherwise noted
STATIC P/N OM6214SS (Per FET) (100 Volt)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage
I
DSS
Zero Gate Voltage Drain
Current
ELECTRICAL CHARACTERISTICS:
T
= 25° unless otherwise noted
STATIC P/N OM6215SS (Per FET) (200 Volt)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
200
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage
I
DSS
Zero Gate Voltage Drain
Current
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= ±20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS,
I
D
= 250
m
V
GS
= ±20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
4.0
±100
0.25
1.0
V
nA
mA
mA
4.0
±100
0.25
1.0
V
nA
mA
mA
0.1
0.2
0.1
0.2
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
30
A
V
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
25
A
V
1.1
1.3
1.36
1.52
R
DS(on)
.055 .065
V
GS
= 10 V, I
D
= 20 A
R
DS(on)
.085
.095
V
GS
= 10 V, I
D
= 16 A
R
DS(on)
.09
0.11
V
GS
= 10 V, I
D
= 20 A,
T
C
= 125 C
R
DS(on)
0.14
0.17
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
9.0
10
2700
1300
470
28
45
100
50
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 20 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
20 A
R
g
= 5.0
W
, V
G
= 10V
(MOSFET) switching times are
essentially independent of
operating temperature.
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
8.0
12.5
2400
600
250
25
60
85
38
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 16 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
16 A
R
g
= 5.0
W
,V
GS
= 10V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
- 30
A
Modified MOSPOWER
- 25
A
Modified MOSPOWER
symbol showing
symbol showing
- 140
A
the integral P-N
- 100
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 2.5
V
ns
- 2
V
ns
400
350
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
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