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參數(shù)資料
| 型號： | OM55N10SC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
| 中文描述： | 低電壓，低的RDS（on）在朗格隔離封裝功率MOSFET |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 75K |
| 代理商： | OM55N10SC |
3
O
3
OM75N05SA
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
I
AR
Avalanche Current
Min.
Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,T
J
= 25°C)
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
(pulse width limited
by T
j max
,
d
< 1%)
(repetitive or
non-repetitive, T
J
= 100°C)
E
AS
Single Pulse Avalanche Energy
900
mJ
E
AR
Repetitive Avalanche Energy
200
mJ
I
AR
Avalanche Current
40
A
Electrical Charactreristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
GSS
Gate-Body Leakage
Current (V
DS
= 0)
Electrical Charactreristics - ON
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On
Resistance
I
D(on)
On State Drain Current
Electrical Charactreristics - Dynamic
g
fs
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Electrical Charactreristics - Switching On
T
d(on)
Turn-On Time
t
r
Rise Time
(di/dt)
on
Turn-On Current Slope
50
V
I
D
= 250 μA, V
GS
= 0
250
1000
±100
μA
μA
nA
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
2
4
V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 40 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
0.018
0.036
75
A
25
S
pF
pF
pF
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
4100
1800
420
190
900
150
nS
nS
A/μS
V
DD
= 20 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 20 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 20 V, I
D
= 40 A, V
GS
= 10 V
Q
g
Total Gate Charge
130
nC
Electrical Charactreristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
t
f
Fall Time
t
cross
Cross-Over Time
Electrical Charactreristics - Source Drain Diode
I
SD
Source Drain Current
I
SDM
(*)
Source Drain Current (pulsed)
V
SD
Forward On Voltage
t
rr
Reverse Recovery Time
360
280
600
nS
nS
nS
V
DD
= 35 V, I
D
= 75 A
R
G
= 50 , V
GS
= 10 V
75
300
1.5
A
A
V
nS
I
SD
= 75 A, V
GS
= 0
I
SD
= 75 A, di/dt = 100 A/μs
V
R
= 20 V
120
Q
rr
I
RRM
*Pulsed: Pulse Duration 300μS, Duty Cycle 1.5%.
Reverse Recovery Charge
Reverse Recovery Current
0.45
6.5
μC
A
D.U.T.
R
L
2200
μF
3.3
μF
V
DD
V
D
R
S
V
DS
F
W
A
A
A
B
B
D
S
G
G
D
S
L = 100μH
D.U.T.
85
3.3
μF
1000
μF
V
DS
R
C
+
–
MOS
Diode
FAST
Diode
25
B
–
TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING
AND DIODE REVERSE RECOVERY TIME
SWITCHING TIMES TEST CIRCUITS
FOR RESISTIVE LOAD
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