參數(shù)資料
型號(hào)： OM3N100ST
英文描述： 1000V, 3.5 Amp, N-Channel MOSFET(1000V, 3.5 A，N溝道MOS場(chǎng)效應(yīng)管)
中文描述： 1000V的3.5安培，N通道MOSFET（1000V的3.5膫n溝道馬鞍山場(chǎng)效應(yīng)管）
文件頁數(shù)： 3/4頁
文件大?。?/td> 40K
代理商： OM3N100ST
3
O
3
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM5N100SA
(See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage
Drain Current
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM6N100SA
(See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS,
I
D
= 250
m
A
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.0 A
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
I
D(on)
On-State Drain Current
5.0
A
I
D(on)
On-State Drain Current
6.0
A
R
DS(on)
Static Drain-Source On-State
Resisitance
1
Static Drain-Source On-State
Resistance
1
3.0
R
DS(on)
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
2.0
R
DS(on)
6.0
V
GS
= 10 V, I
D
= 2.5 A
T
C
= 100 C
R
DS(on)
4.0
V
GS
= 10 V, I
D
= 3.0 A
T
C
= 100° C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
r(
V
off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
r
(V
off
) Off-Voltage Rise Time
t
f
Fall Time
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Off-Voltage Rise Time
Fall Time
4.0
S
pF
pF
pF
ns
ns
ns
ns
V
DS
= 25 V
DS(on)
, I
D
= 2.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
4.0
S
pF
pF
pF
ns
ns
ns
ns
V
DS
= 25V, I
D
= 3.0 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
2600
350
150
65
55
62
25
2600
350
150
65
55
62
25
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
2
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
2
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
6
A
Modified MOSPOWER
6
A
Modified MOSPOWER
symbol showing
symbol showing
24
A
the integral P-N
24
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/
m
s, T
J
= 150 C
2.5
V
ns
2.5
V
ns
1100
1000
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3
. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3.
Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
V
DD
= 800 V,
I
D
= 6A
RG= 7
W,
VGS
=
10 V
V
DD
= 800 V,
I
D
=6A
RG= 7
W,
VGS
=
10 V
G
D
S
G
D
S
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