參數(shù)資料
型號: OH10010(OH010)
英文描述: GaAs device - GaAs Hall Devices
中文描述: GaAs設備-砷化鎵霍爾器件
文件頁數(shù): 2/3頁
文件大?。?/td> 71K
代理商: OH10010(OH010)
GaAs Hall Devices
688
OH10003
P
D
T
a
R
IN
T
a
V
H
T
a
V
H
B
V
H
I
C
V
H
V
C
I
Typical Drive Circuit
+
9 V
+
V
+
9 V
9 V
V
9 V
+
3
1
2
4
0
40
Ambient temperature T
a
(
°
C)
0
40
80
120
40
80
120
160
200
240
H
H
B
=
1 kG
I
C
=
6 mA
0
40
Ambient temperature T
a
(
°
C)
0
40
80
120
800
1 600
1 400
1 200
1 000
600
400
200
I
I
)
B
=
0
I
C
=
1 mA
0
0
1.2
0.2
1.0
0.4
0.6
0.8
800
400
1 600
1 200
600
200
1 000
1 400
Magnetic flux density B (T)
H
H
V
C
=
6 V
T
a
=
25
°
C
0
0
4
12
16
2
6
10
14
8
40
80
120
160
200
240
280
320
Control current I
C
(mA)
H
H
B
=
1 kG
T
a
=
25
°
C
0
0
4
12
16
2
6
10
14
8
40
80
120
160
200
240
280
320
Control voltage V
C
(V)
H
H
B
=
1 kG
T
a
=
25
°
C
0
40
80
120
160
200
180
140
100
60
20
0
20
40
80
60
140
120
100
160
Ambient temperature T
a
(
°
C)
P
D
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