參數(shù)資料
型號(hào): NX8562LB
廠商: NEC Corp.
英文描述: 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE
中文描述: 1 550 nm的連續(xù)光源InGaAsP的應(yīng)變量子阱激光器激光二極管模塊
文件頁數(shù): 3/8頁
文件大?。?/td> 66K
代理商: NX8562LB
3
NX8562LB
ORDERING INFORMATION
Part Number
Available Connector
NX8562LB
Without Connector
NX8562LB-BA
With FC-PC Connector
NX8562LB-CA
With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current of LD
I
F
300
mA
Reverse Voltage of LD
V
R
2.0
V
Forward Current of PD
I
F
10
mA
Reverse Voltage of PD
V
R
20
V
Operating Case Temperature
T
C
20 to +65
°
C
Storage Temperature
T
stg
40 to +85
°
C
Lead Soldering Temperature (10 s)
T
sld
260
°
C
ELECTRO-OPTICAL CHARACTERISTICS (T
LD
= 25
°
C, T
C
=
20 to +65
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Laser Set Temperature
T
set
20
35
°
C
Forward Voltage
V
F
P
f
= 20 mW
0.9
1.5
V
Threshold Current
I
th
20
40
mA
Optical Output Power from Fiber
P
f
I
F
= 167 mA, T
LD
= T
set
20
mW
Threshold Output Power from Fiber
P
th
I
F
= I
th
100
μ
W
Quantum Efficiency
η
0.13
W/A
Peak Emission Wavelength
*1
λ
p
P
f
= 20 mW, CW, T
LD
= T
set
1 540
1 561
nm
Spectral Line Width
ν
P
f
= 20 mW, CW, 3 dB down
1
2
MHz
Side Mode Suppression Ratio
SMSR
P
f
= 20 mW, CW
30
35
dB
FM Response
η
FM
P
f
= 20 mW
50
70
MHz/mA
Relative Intensity Noise
RIN
P
f
= 20 mW, 20 MHz to 3 GHz
150
dB/Hz
Flat frequency response
f
m
P
f
= 20 mW, +/
3 dB
1.8
GHz
Polarization Extinction Ratio
*2
ext
P
f
= 20 mW, CW
15
20
dB
*1
Wavelength selectable for ITU-T standards.
*2
Polarization state of LD is aligned parallel to the slow axis.
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NX8562LB-BA 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE
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