參數(shù)資料
型號: NX8561JD
廠商: NEC Corp.
英文描述: 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
中文描述: 摻鉺光纖放大器1 480納米的應(yīng)用InGaAsP的應(yīng)變量子阱的DC -異質(zhì)結(jié)激光二極管模塊
文件頁數(shù): 6/12頁
文件大?。?/td> 65K
代理商: NX8561JD
Data Sheet P14128EJ2V0DS00
6
NX7660JC
LD FAMILY FOR DENSE WDM APPLICATION
Absolute Maximum Ratings
Typical Characteristics
Part Number
T
C
(
°
C)
T
stg
(
°
C)
I
th
(mA)
P
f
(mW)
λ
C
(nm)
Description
Package
TYP.
MIN.
TYP.
NX7460LE
20 to +65
40 to +85
25
120
1 480
1 480 nm pump LD
module
BFY
NX8501 Series
0 to +65
40 to +85
20
2
1 510
Telemetry
Coaxial
NX8561JC
*1
0 to +65
40 to +85
20
3
1 510
Telemetry
DIP
NX7660JC
5 to +70
40 to +85
15
5
1 625
Telemetry
DIP
NDL7910P
20 to +70
40 to +85
7
0.5
1 550
*2
2.5 G EA modulator
integrated module
BFY
NX8562LB
20 to +65
40 to +85
20
20
1 550
*2
1 550 CW LD module
BFY
NX8563LB
20 to +65
40 to +85
20
10
ITU-T
*3
1 550 CW LD module
BFY
*1
Under development
*2
Wavelength selectable for ITU-T standards upon request
*3
Wavelength selectable for ITU-T standards
相關(guān)PDF資料
PDF描述
NX7660JC InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
NX7660JC-BA InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
NX7660JC-CA InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
NX8562LB 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE
NX8562LB-BA 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE
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NX8562 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)
NX8562-AZ 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)
NX8562LB 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS
NX8562LB279 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic
NX8562LB279-BA 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)