- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363717 > NX8503BG (NEC Corp.) NECs 1550 nm InGaAsP MQW DFB LASER DIODE PDF資料下載
參數(shù)資料
| 型號： | NX8503BG |
| 廠商： | NEC Corp. |
| 英文描述： | NECs 1550 nm InGaAsP MQW DFB LASER DIODE |
| 中文描述： | 鄰舍1550 InGaAsP多量子阱激光器波長激光二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 98K |
| 代理商： | NX8503BG |
NEC's 1550 nm
InGaAsP MQW DFB LASER DIODE
IN COAXIAL PACKAGE
FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
NX8503BG-CC
NX8503CG-CC
FEATURES
PEAK EMISSION WAVELENGTH:
λ
P
= 1550 nm
OPTICAL OUTPUT POWER:
P
f
= 2.0 mW
LOW THRESHOLD CURRENT:
I
TH
= 15 mA @ T
C
= 25
°
C
InGaAs MONITOR PIN-PD
WIDE OPERATING TEMPERATURE RANGE:
T
C
= -10 to +85
°
C
WITH SC-UPC CONNECTOR
BASED ON TELCORDIA RELIABILITY
NEC's NX8503BG-CC and NX8503CG-CC are 1550 nm Co-
axial Module DFB (Distributed Feed-Back) laser diode with
single mode fiber. Multiple Quantum Well (MQW) structure is
adopted to achieve stable dynamic single longitudinal mode
operation over a wide temperature range of -10 to +85
°
C.
The module is ideal as a light source for Synchronous Digital
Hierarchy (SDH) system, STM-1, log-haul L-1.2, L-1.3 and
STM-4, long-haul L-4.2, L-4.3 ITU-T recommendations.
DESCRIPTION
PART NUMBER
NX8300BG-CC, NX8300CG-CC
SYMBOLS
P
f
V
OP
I
TH
PARAMETERS AND CONDITIONS
Optical Output Power from Fiber, CW
Operating Voltage,
P
f
= 2.0 mW
Threshold Current
UNITS
mW
V
mA
mA
μ
W
mA
mA
MIN
TYP
2.0
1.1
15
MAX
1.6
25
50
100
40
60
T
C
= +25
°
C
2
P
TH
I
MOD
Threshold Output Power, I
F
= I
TH
Modulation Current
P
f
= 2.0 mW, T
C
= 25
°
C
P
f
= 2.0 mW
15
13
25
η
d
Differential Efficiency
P
f
= 2.0 mW, T
C
= 25
°
C
P
f
= 2.0 mW
W/A
W/A
dB
0.050
0.030
-3
0.080
0.130
0.150
η
d
Temperature Dependence of Differential Efficiency,
η
d
= 10 log
η
d
(@ T
C
°C)
η
d
(@ 25 °C)
-1.6
Kink
Kink, P
f
= Up to 2.4 mW (Refer to defenitions)
Peak Emission Wavelength, P
f
= 2.0 mW
Temperature Dependence of Peak Emission Wavelength
Spectral Width, P
f
= 2.0 mW, -20 dB down width
Side Mode Suppression Ratio, P
f
= 2.0 mW
Cut-off Frequency, -3 dB, V
R
= 5 V, P
f
= 2.0 mW
Rise Time, 10 to 90%, P
pk
= 2.0 mW, I
F
= I
TH
Fall Time, 90 to 10%, P
pk
= 2.0 mW, I
F
= I
TH
Monitor Current, V
R
= 5 V, P
f
= 2.0 mW
Monitor Dark Current
%
nm
±
20
1570
0.12
1.0
λ
p
1530
1550
0.1
0.3
40
2.0
λ
/
T
nm/
°
C
nm
dB
GHz
ns
ns
μ
A
nA
nA
λ
SMSR
f
c
t
r
t
f
I
m
I
D
30
0.5
0.5
2000
50
500
200
1000
1.0
10
V
R
= 5 V, T
C
= 25
°
C
V
R
= 5 V
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -10 to +85
°
C, unless otherwise specified)
continued next page
California Eastern Laboratories
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NX8503CG | NECs 1550 nm InGaAsP MQW DFB LASER DIODE |
| NX8563LB | 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE |
| NZ48F3000L0YTQ0 | StrataFlash Wireless Memory |
| NZ48F4000L0ZBQ0 | 1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30) |
| NZ48F4000L0ZTQ0 | 1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NX8503BG-CC | 制造商:NEC 制造商全稱:NEC 功能描述:NECs 1550 nm InGaAsP MQW DFB LASER DIODE |
| NX8503CG | 制造商:NEC 制造商全稱:NEC 功能描述:NECs 1550 nm InGaAsP MQW DFB LASER DIODE |
| NX8503CG-CC | 制造商:NEC 制造商全稱:NEC 功能描述:NECs 1550 nm InGaAsP MQW DFB LASER DIODE |
| NX8504BE-CC | 制造商:CEL 制造商全稱:CEL 功能描述:1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION |
| NX8504CE-CC | 制造商:CEL 制造商全稱:CEL 功能描述:1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。