參數(shù)資料
型號: NX5306EK
廠商: NEC Corp.
英文描述: NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE
中文描述: NEC公司的1310 nm InGaAsP多量子阱FP激光二極管可包裝
文件頁數(shù): 5/7頁
文件大?。?/td> 230K
代理商: NX5306EK
NX5306 SERIES
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -25°C, unless otherwise speci
T
ed)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Operating Voltage
V
op
P
o
= 5.0 mW, T
C
=
40 to +85
°
C
1.1
1.5
V
Threshold Current
I
th
10
15
mA
T
C
= 85
°
C
25
30
Threshold Output Power
P
th
T
C
=
40 to +85
°
C, I
F
= I
th
100
200
μ
W
Differential Ef
T
ciency
η
d
0.32
0.4
W/A
Temperature Dependence of
Differential Ef
T
ciency
Δη
d
Δη
d
= 10 log
3.0
1.2
dB
Center Wavelength
λ
C
P
o
= 5.0 mW, RMS (
20 dB)
T
C
=
40 to +85
°
C
1 263
1 360
nm
Temperature Dependence of
Center Wavelength
Δλ
/
Δ
T
T
C
=
40 to +85
°
C
0.4
0.5
nm/
°
C
Spectral Width
σ
P
o
= 5.0 mW, RMS (
20 dB)
T
C
=
40 to +85
°
C
1.0
2.5
nm
Rise Time
t
r
10-90%
0.15
0.3
ns
Fall Time
t
f
90-10%
0.15
0.3
ns
Monitor Current
I
m
V
R
= 5 V, P
o
= 5.0 mW
150
300
600
μ
A
Monitor Dark Current
I
D
V
R
= 5 V
0.1
10
nA
V
R
= 5 V, T
C
=
40 to +85
°
C
500
Monitor PD Terminal Capacitance
C
t
V
R
= 5 V, f = 1 MHz
6
20
pF
Tracking Error
*1
γ
I
m
= const. (@ P
o
= 5.0 mW, T
C
=
25
°
C)
T
C
=
40 to +85
°
C
1.0
1.0
dB
η
d
(@85oC)
η
d
(@25oC)
*1
Tracking Error:
γ
0
I
m
I
m
T
C
= 25oC
T
C
= -40 to +85oC
P
o
(mW)
P
o
5.0
(mA)
γ
= 10 log
[dB]
P
o
5.0
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