型號(hào): | NUS3055MUTAG |
廠商: | ON SEMICONDUCTOR |
元件分類: | 電源管理 |
英文描述: | Low Profile Overvoltage Protection IC with Integrated MOSFET |
中文描述: | 1-CHANNEL POWER SUPPLY SUPPORT CKT, DSO8 |
封裝: | 3 X 2.50 MM, 0.55 MM HEIGHT, 0.65 MM PITCH, TLLGA-8 |
文件頁數(shù): | 9/10頁 |
文件大?。?/td> | 117K |
代理商: | NUS3055MUTAG |
相關(guān)PDF資料 |
PDF描述 |
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NUS5530MN | Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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NUS3065MU | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Profile Overvoltage Protection IC with Integrated MOSFET |
NUS3065MUTAG | 功能描述:監(jiān)控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲(典型值):10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
NUS3116MT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Main Switch Power MOSFET and Dual Charging BJT |
NUS3116MTR2G | 功能描述:MOSFET OSPI QUAD BUS BUFFER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
NUS5530MN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |