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參數(shù)資料
| 型號： | NUS3046MN |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Overvoltage Protection IC with Integrated MOSFET |
| 中文描述： | 過壓保護集成電路集成MOSFET |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 143K |
| 代理商： | NUS3046MN |
NUS3046MN
http://onsemi.com
5
Normal Operation
Figure 1 illustrates a typical configuration. The external
adapter provides power to the protection system so the
circuitry is only active when the adapter is connected. The
OVP monitors the voltage from the charger and if the
voltage exceeds the overvoltage threshold, V
th
, the OUT
signal drives the gate of the MOSFET to within 1.0 V of
V
CC
, thus turning off the FET and disconnecting the source
from the load. The nominal time it takes to drive the gate to
this state is 400 nsec (1.0
capacitance of < 12 nF). The CNTRL input can be used to
interrupt charging and allow the microcontroller to measure
the cell voltage under a normal condition to get a more
accurate measure of the battery voltage. Once the
overvoltage is removed, the MOSFET will be turned on
again.
There are two events that will cause the OVP to turn off
the MOSFET.
Voltage on IN Rises Above the Overvoltage Detection
Threshold
CNTRL Input is Driven to a Logic HIGH
sec maximum for gate
Adjusting the Overvoltage Detection Point with
External Resistors
The separate IN and V
CC
pins allow the user to adjust the
overvoltage threshold, V
th
, upwards by adding a resistor
divider with the tap at the IN pin. However, the input
impedance R
in
does play a significant role in the calculation
since it is several 10’s of k (R
in
= 54 k typical). The
following equation shows the effects of R
in
.
VCC
Vx(1
R1(R2
Rin))
(eq. 1)
GND
Figure 2. Voltage divider input to adjust overvoltage
detection point
V
CC
R
1
R
2
R
in
NUS3046
I
N
which equates to:
VCC
Vx(1
R1R2
R1Rin)
(eq. 2)
So, as R
in
approaches infinity:
VCC
Vx(1
R1R2)
(eq. 3)
This shows that R
in
shifts the V
th
detection point in
accordance to the ratio of R
1
/ R
in
. However, if R
1
<< R
in
,
this shift can be minimized. The following steps show this
procedure.
Designing around the Maximum Voltage Rating
Requirements, V(V
CC
, IN)
The maximum breakdown voltage between pins V
CC
and
IN is 15 V. Therefore, care must be taken that the design does
not exceed this voltage. Normally, the designer shorts V
CC
to IN, V(V
CC
, IN) is shorted to 0 V, so there is no issue.
However, one must take care when adjusting the
overvoltage threshold.
In Figure 2, the R1 resistor of the voltage divider divides
the V(V
CC
, IN) voltage to a given voltage threshold equal to:
(VCC,IN)
VCC* (R1 (R1
(R2
Rin)))
(eq. 4)
V(V
CC
, IN) worst case equals 15 V, and V
CC
worst case
equals 30 V, therefore, one must ensure that:
R1 (R1
(R2
Rin))
0.5
(eq. 5)
Where 0.5 = V(V
CC
, IN)max/V
CCmax
Therefore, the overvoltage threshold should be adjusted to
voltage levels that are less than 15 V. If greater thresholds are
desired, ON Semiconductor offers the NCP3045 which can
withstand those voltages.
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| NUS3046MNT1G | 功能描述:MOSFET 5.5V OVP IC W/ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NUS3055MUTAG | 功能描述:監(jiān)控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| NUS3065MU | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Profile Overvoltage Protection IC with Integrated MOSFET |
| NUS3065MUTAG | 功能描述:監(jiān)控電路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| NUS3116MT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Main Switch Power MOSFET and Dual Charging BJT |
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