參數(shù)資料
型號(hào): NUS2401SNT1G
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: Integrated PNP/NPN Digital Transistors Array
中文描述: 200 mA, 50 V, 3 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, CASE 318F-05, SC-74, 6 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 52K
代理商: NUS2401SNT1G
NUS2401SNT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted: T
J
= 25
°
C for typical values, common for Q1, Q2, and Q3, minus signed for Q3 (PNP) omitted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
CollectorEmitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
EmitterBase Cutoff Current (V
CE
= 6.0 V, I
C
= 0)
Q3
Q1, Q2
I
EBO
500
0.1
A
CollectorBase Breakdown Voltage (I
C
= 10 A, I
E
= 0)
V
(BR)CBO
50
V
CollectorEmitter Breakdown Voltage (Note 1)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
V
ON CHARACTERISTICS
(Note 1)
DC Current Gain
Q3
Q1, Q2
h
FE
35
150
60
350
CollectorEmitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 1.0 mA)
Q3
Q1, Q2
V
CE(sat)
0.25
0.25
Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
V
OL
0.2
V
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k )
V
OH
4.9
V
Input Resistor
Q3
Q1, Q2
R1
7.0
0.13
10
0.175
13
0.22
k
Resistor Ratio
Q3
Q1, Q2
R1/R2
1.0
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%.
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