- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361166 > NUS1204MN (ON SEMICONDUCTOR) Overvoltage Protection IC with Integrated MOSFET PDF資料下載
參數(shù)資料
| 型號： | NUS1204MN |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Overvoltage Protection IC with Integrated MOSFET |
| 中文描述： | 過壓保護(hù)集成電路集成MOSFET |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NUS1204MN |
NUS1204MN
http://onsemi.com
3
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise stated)
Rating
Pin
Symbol
Min
Max
Unit
OUT Voltage to GND
2
V
O
0.3
12
V
Input Pin Voltage to GND
4
V
input
0.3
12
V
Maximum Power Dissipation
(
Note 1
)
P
D
0.96
W
Thermal Resistance JunctiontoAir
(
Note 1
)
OVP IC
PChannel FET
R
θ
JA
130
130
°
C/W
Junction Temperature
T
J
150
°
C
Operating Ambient Temperature
T
A
40
85
°
C
Storage Temperature Range
T
stg
65
150
°
C
ESD Performance (HBM)
(
Note 2
)
2,3,4
2.5
kV
DraintoSource Voltage
V
DSS
12
V
GatetoSource Voltage
V
GS
8
8
V
Continuous Drain Current, Steady State, T
A
= 25
°
C (Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surfacemounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 30157, (R = 1500 , C = 100 pF, F = 3 pulses delay 1 s).
I
D
0.6
A
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C, Vcc = 6.0 V, unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Input Threshold (Pin 4, V
in
Increasing)
V
TH
4.630
4.725
4.820
V
Input Threshold Hysteresis (Pin 4, V
in
Decreasing)
V
HYS
0.135
0.225
0.315
V
Supply Current (Pin 4)
(V
in
= 4.34 V)
(V
in
= 6.5 V)
I
in
3.0
3.9
A
Minimum Operating Voltage (Pin 4) (Note 3)
(T
A
= 25
°
C)
(T
A
= 40
°
C to 85
°
C)
V
in(min)
0.55
0.65
0.70
0.80
V
Output Voltage High (V
in
= 8.0 V; I
Source
= 1.0 mA)
Output Voltage High (V
in
= 8.0 V; I
Source
= 0.25 mA)
Output Voltage High (V
in
= 8.0 V; I
Source
= 0 mA)
V
oh
V
in
1.0
V
in
0.25
V
in
0.1
V
Output Voltage Low
(Input < 4.5 V; I
Sink
= 0 mA; CNTRL = 0 V)
V
ol
0.1
V
Propagation Delay Input to Output
s
Complementary Output NCP304 Series
Output Transition, High to Low
Output Transition, Low to High
t
pHL
t
pLH
10
21
60
3. Guaranteed by design.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NUS1204MNT1G | Overvoltage Protection IC with Integrated MOSFET |
| NUS2045MN | Overvoltage Protection IC with Integrated MOSFET |
| NUS2045MNT1 | Overvoltage Protection IC with Integrated MOSFET |
| NUS2045MNT1G | Overvoltage Protection IC with Integrated MOSFET |
| NUS3045MN | Overvoltage Protection IC with Integrated MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NUS1204MNT1G | 功能描述:監(jiān)控電路 OVERVOLTAGE PROTECT IC RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| NUS2 | 制造商:IDEC CORPORATION 功能描述:Color Caps For Circuit Breaker |
| NUS2045 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic |
| NUS2045MN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Overvoltage Protection IC with Integrated MOSFET |
| NUS2045MNT1 | 功能描述:IC OVP W/20V P-CH MOSFET DFN8 RoHS:否 類別:過電壓，電流，溫度裝置 >> TVS - 其它復(fù)合 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 工作:120V 電壓 - 箝位:- 技術(shù):混合技術(shù) 功率（瓦特）:- 電路數(shù):1 應(yīng)用:通用 封裝/外殼:模塊 供應(yīng)商設(shè)備封裝:- 包裝:散裝 其它名稱:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。