參數(shù)資料
型號: NUP46V8P5T5G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Low Capacitance Quad Array for ESD Protection
中文描述: 20 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: LEAD FREE, CASE 527AB-01, 5 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 59K
代理商: NUP46V8P5T5G
NUP45V6P5 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
UniDirectional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ T
A
= 25
°
C) (Note 1)
NUP45V6P5
NUP46V8P5
NUP412VP5
P
PK
14
30
65
W
Thermal Resistance JunctiontoAmbient
Above 25
°
C, Derate
R
JA
560
4.5
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
Human Body Model (HBM)
Machine Model (MM)
IEC6100042 Air (ESD)
IEC6100042 Contact (ESD)
ESD
16000
400
15000
8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Device
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
Typ Capacitance
@ 0 V Bias (pF)
(Note 2)
Typ Capacitance
@ 3 V Bias (pF)
(Note 2)
Min
Nom
Max
V
RWM
I
RWM
( A)
Typ
Max
Typ
Max
NUP45V6P5
5
5.3
5.6
5.9
3.0
1.0
13
17
7.0
11.5
NUP46V8P5
6
6.47
6.8
7.14
4.3
1.0
12
15
6.7
9.5
NUP412VP5
2
11.4
12
12.7
9.0
0.5
6.5
10
3.5
5.0
1. Nonrepetitive current per Figure 1.
2. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
°
C
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