參數(shù)資料
型號(hào)： NUP45V6P5
廠商： ON SEMICONDUCTOR
英文描述： Low Capacitance Quad Array for ESD Protection(ESD保護(hù)，低容抗方形陣列)
中文描述： 低電容四陣列（靜電放電保護(hù)，低容抗方形陣列ESD保護(hù)）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 50K
代理商： NUP45V6P5
NUP45V6P5 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
UniDirectional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ T
A
= 25
°
C) (Note 1)
NUP45V6P5
NUP46V8P5
NUP412VP5
P
PK
14
30
65
W
Thermal Resistance JunctiontoAmbient
Above 25
°
C, Derate
R
JA
560
4.5
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
Human Body Model (HBM)
Machine Model (MM)
IEC6100042 Air (ESD)
IEC6100042 Contact (ESD)
ESD
16000
400
15000
8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Device
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
Typ Capacitance
@ 0 V Bias (pF)
(Note 2)
Typ Capacitance
@ 3 V Bias (pF)
(Note 2)
Min
Nom
Max
V
RWM
I
RWM
( A)
Typ
Max
Typ
Max
NUP45V6P5
5
5.3
5.6
5.9
3.0
1.0
13
17
7.0
11.5
NUP46V8P5
6
6.47
6.8
7.14
4.3
1.0
12
15
6.7
9.5
NUP412VP5
2
11.4
12
12.7
9.0
0.5
6.5
10
3.5
5.0
1. Nonrepetitive current per Figure 1.
2. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
°
C
相關(guān)PDF資料
PDF描述
NUP412VP5 Low Capacitance Quad Array for ESD Protection(ESD保護(hù)，低容抗方形陣列)
NUP46V8P5 Low Capacitance Quad Array for ESD Protection(ESD保護(hù)，低容抗方形陣列)
NUP5120X6T1G 5−Line Transient Voltage Suppressor Array
NUP5120X6T2G 5−Line Transient Voltage Suppressor Array
NUP8028MNT1G Low Capacitance Transient Voltage Suppressor Array
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NUP45V6P5_09 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection
NUP45V6P5T5G 功能描述:TVS二極管陣列 5.6 V Quad Array RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類(lèi)型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NUP46V8P5 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection
NUP46V8P5T5G 功能描述:TVS二極管陣列 HANA SEMI TH2 SOT953 RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類(lèi)型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NUP5120/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:5-Line Transient Voltage Suppressor Array
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*