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參數資料
| 型號： | NUP4301MR6T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance Diode Array for ESD Protection in Four Data Lines(在四條數據線中用于進行ESD保護的低電容二極管陣列) |
| 中文描述： | UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封裝： | CASE 318F-04, TSOP-6 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | NUP4301MR6T1 |
Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 2
1
Publication Order Number:
NUP4301MR6T1/D
NUP4301MR6T1
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
NUP4301MR6T1 is a MicroIntegration
device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (1.5 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000-4-2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Applications
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
MAXIMUM RATINGS
(Each Diode) (T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
V
RRM
70
V
Average Rectified Forward
Current (Note 1)
(averaged over any 20 ms period)
I
F(AV)
715
mA
Repetitive Peak Forward Current
I
FRM
450
mA
Non-Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
I
FSM
2.0
1.0
0.5
A
1. FR-5 = 1.0
0.75
0.062 in.
Device
Package
Shipping
ORDERING INFORMATION
NUP4301MR6T1
TSOP-6
3000/Tape & Reel
MARKING DIAGRAM
TSOP-6
CASE 318F
PLASTIC
http://onsemi.com
64
d
64 = Specific Device Code
d
= Date Code
1
6
6 I/O
5 V
P
4 I/O
I/O 1
V
N
2
1/O 3
2
5
3
4
PIN CONFIGURATION
AND SCHEMATIC
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| NUP5120X6 | 5 Line Transient Voltage Suppressor Array(5線瞬變電壓抑制器陣列) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NUP4301MR6T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4301MR6T1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4301MR6T1G | 功能描述:整流器 Low Cap. for ESD Protection in 4 Line RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NUP4301MR6T1G | 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY 70V TSOP 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 70V, TSOP |
| NUP4301MR6T1G-CUT TAPE | 制造商:ON 功能描述:NUP4301 Series 5 pF Diode Array for ESD Protection in 4 Data Lines - TSOP-6 |
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