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參數資料
| 型號： | NUP412VP5T5G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance Quad Array for ESD Protection |
| 中文描述： | 65 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, CASE 527AB-01, 5 PIN |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | NUP412VP5T5G |
NUP45V6P5 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
UniDirectional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ T
A
= 25
°
C) (Note 1)
NUP45V6P5
NUP46V8P5
NUP412VP5
P
PK
14
30
65
W
Thermal Resistance JunctiontoAmbient
Above 25
°
C, Derate
R
JA
560
4.5
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
Human Body Model (HBM)
Machine Model (MM)
IEC6100042 Air (ESD)
IEC6100042 Contact (ESD)
ESD
16000
400
15000
8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Device
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
Typ Capacitance
@ 0 V Bias (pF)
(Note 2)
Typ Capacitance
@ 3 V Bias (pF)
(Note 2)
Min
Nom
Max
V
RWM
I
RWM
( A)
Typ
Max
Typ
Max
NUP45V6P5
5
5.3
5.6
5.9
3.0
1.0
13
17
7.0
11.5
NUP46V8P5
6
6.47
6.8
7.14
4.3
1.0
12
15
6.7
9.5
NUP412VP5
2
11.4
12
12.7
9.0
0.5
6.5
10
3.5
5.0
1. Nonrepetitive current per Figure 1.
2. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
°
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NUP4201 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic |
| NUP4201DR2 | 功能描述:TVS二極管陣列 Low Cap. TVS Array RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NUP4201DR2/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Surface Mount TVS for High Speed Data Interfaces |
| NUP4201DR2G | 功能描述:TVS二極管陣列 LO CAPACITANCE SURF MNT TVS RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NUP4201DR2G | 制造商:ON Semiconductor 功能描述:; Diode Type:Unidirectional TVS; Stand-O |
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