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參數(shù)資料
| 型號(hào)： | NUP4102XV6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 6−Pin Bi−Directional Quad TVS Array |
| 中文描述： | 75 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | NUP4102XV6T1G |
NUP4102XV6
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
=25
°
C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Working Voltage
(Note 2)
V
RWM
12
V
Breakdown Voltage
I
T
= 1 mA, (Note 3)
V
BR
13.6
17.8
V
Reverse Leakage Current
V
RWM
= 12 V
I
R
10
100
nA
Clamping Voltage
I
PP
= 3 A, (8x20 sec
Waveform)
V
C
25
V
Maximum Peak Pulse Current
8x20 sec waveform
I
PP
3.0
A
Capacitance
V
R
= 0 V, f=1 MHz
(Line to GND)
C
j
13
15
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
; Pulse Width 1 ms.
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise specified)
Figure 1. Pulse Waveform
t, TIME ( s)
30
15
10
5
0
P
P
25
20
90
80
70
60
50
40
30
20
10
0
100
110
WAVEFORM
PARAMETERS
t
r
= 8 s
t
d
= 20 s
t
d
= I
PP
/2
ct
T
A
, AMBIENT TEMPERATURE (
°
C)
150
125
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
100
110
%
P
Figure 2. Power Derating Curve
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
V
BR
, REVERSE VOLTAGE (V)
Figure 4. Junction Capacitance vs. Reverse
Voltage
12
14
16
18
20
22
24
0.1
1
10
C
,
Figure 3. Clamping Voltage vs. Peak Pulse
Current (10 sec Square Wave Pulse)
I
PP
, SURGE CURRENT (A)
t
P
= 10 sec
T
A
= 25
°
C
J
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