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參數(shù)資料
| 型號： | NUP2202W1T2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance SC-88 Diode-TVS Array for HIGH Speed Data Lines Protection |
| 中文描述： | 500 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 76K |
| 代理商： | NUP2202W1T2G |
NUP2202W1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
=25
°
C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
5.0
V
Breakdown Voltage
V
BR
I
T
= 1 mA, (Note 3)
6.0
V
Reverse Leakage Current
I
R
V
RWM
= 5 V
5.0
A
Clamping Voltage
V
C
I
PP
= 5 A (Note 4)
12.5
V
Clamping Voltage
V
C
I
PP
= 8 A (Note 4)
20
V
Maximum Peak Pulse Current
I
PP
8x20 s Waveform
25
A
Junction Capacitance
C
J
V
R
= 0 V, f = 1 MHz between I/O Pins and GND
3.0
5.0
pF
Junction Capacitance
C
J
V
R
= 0 V, f = 1 MHz between I/O Pins
1.5
3.0
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Nonrepetitive current pulse per Figure 1 (Pin 5 to Pin 2)
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
Figure 1. Pulse Derating Curve
100
90
80
70
60
50
40
30
20
10
00
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 2. 8
×
20 s Pulse Waveform
100
90
80
70
60
50
40
30
20
10
00
20
40
60
t, TIME ( s)
%
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
PEAK VALUE I
RSM
@ 8 s
HALF VALUE I
RSM
/2 @ 20 s
80
Figure 3. Junction Capacitance vs Reverse Voltage
5.0
2.5
2.0
0.0
0
1
V
BR
, REVERSE VOLTAGE (V)
J
2
3
4
5
I/O lines
I/OGround
P
4.5
4.0
1.5
3.5
1.0
3.0
0.5
Figure 4. Clamping Voltage vs. Peak Pulse Current
(8 x 20 s Waveform)
20
10
8
0
0
10
PEAK PULSE CURRENT (A)
C
20
30
40
50
18
16
6
14
4
12
2
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