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參數(shù)資料
| 型號： | NUD3124LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Automotive Inductive Load Driver |
| 中文描述： | 150 mA, 28 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 80K |
| 代理商： | NUD3124LT1 |
NUD3124
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Symbol
Rating
Value
Unit
V
DSS
DraintoSource Voltage – Continuous
(T
J
= 125
°
C)
28
V
V
GSS
GatetoSource Voltage – Continuous
(T
J
= 125
°
C)
12
V
I
D
Drain Current – Continuous
(T
J
= 125
°
C)
150
mA
E
Z
Single Pulse DraintoSource Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
250
mJ
P
PK
Peak Power Dissipation, DraintoSource (Notes 1 and 2)
(T
J
Initial
= 85
°
C)
20
W
E
LD1
Load Dump Suppressed Pulse, DraintoSource (Notes 3 and 4)
(Suppressed Waveform: V
s
= 45 V, R
SOURCE
= 0.5 , T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
80
V
E
LD2
Inductive Switching Transient 1, DraintoSource
(Waveform: R
SOURCE
= 10 , T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
100
V
E
LD3
Inductive Switching Transient 2, DraintoSource
(Waveform: R
SOURCE
= 4.0 , T = 50 s)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
300
V
RevBat
Reverse Battery, 10 Minutes (DraintoSource)
(For Relay’s Coils/Inductive Loads of 80 or more)
14
V
DualVolt
Dual Voltage Jump Start, 10 Minutes (DraintoSource)
28
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2,000
V
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80 , see Figure 4.
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
T
A
Operating Ambient Temperature
40 to 125
°
C
T
J
Maximum Junction Temperature
150
°
C
T
STG
Storage Temperature Range
65 to 150
°
C
P
D
Total Power Dissipation (Note 5)
Derating above 25
°
C
SOT23
225
1.8
mW
mW/
°
C
P
D
Total Power Dissipation (Note 5)
Derating above 25
°
C
SC74
380
3.0
mW
mW/
°
C
R
JA
Thermal Resistance Junction–to–Ambient (Note 5)
SOT23
SC74
556
329
°
C/W
5. Mounted onto minimum pad board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NUD3124LT1G | 功能描述:MOSFET 28V Industrial Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NUD3124LT1G/H | 制造商:ON Semiconductor 功能描述: |
| NUD3124LT1G-CUT TAPE | 制造商:ON 功能描述:NUD Series 12 V 200 mA SMT Automotive Inductive Load Driver - SOT-23-3 |
| NUD3150/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Integrated Relay Inductive Load Driver |
| NUD3160 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:5 V Relay Driver Socket |
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