參數(shù)資料
型號： NUD3124DMT1
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Automotive Inductive Load Driver
中文描述： 150 mA, 28 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： CASE 318F-05, SC-74, 6 PIN
文件頁數(shù)： 3/10頁
文件大?。?/td> 80K
代理商： NUD3124DMT1
NUD3124
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(I
D
= 10 mA)
V
BRDSS
28
34
38
V
Drain to Source Leakage Current
(V
DS
= 12 V, V
GS
= 0 V)
(V
DS
= 12 V, V
GS
= 0 V, T
J
= 125
°
C)
(V
DS
= 28 V, V
GS
= 0 V)
(V
DS
= 28 V, V
GS
= 0 V, T
J
= 125
°
C)
I
DSS
0.5
1.0
50
80
A
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 3.0 V, V
DS
= 0 V, T
J
= 125
°
C)
(V
GS
= 5.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V, T
J
= 125
°
C)
I
GSS
60
80
90
110
A
ON CHARACTERISTICS
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 125
°
C)
V
GS(th)
1.3
1.3
1.8
2.0
2.0
V
Drain to Source OnResistance
(I
D
= 150 mA, V
GS
= 3.0 V)
(I
D
= 150 mA, V
GS
= 3.0 V, T
J
= 125
°
C)
(I
D
= 150 mA, V
GS
= 5.0 V)
(I
D
= 150 mA, V
GS
= 5.0 V, T
J
= 125
°
C)
R
DS(on)
1.4
1.7
0.8
1.1
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
J
= 125
°
C)
I
DS(on)
150
140
200
mA
Forward Transconductance
(V
DS
= 12 V, I
D
= 150 mA)
g
FS
500
mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Ciss
32
pf
Output Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Coss
21
pf
Transfer Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Crss
8.0
pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Low to High Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
High to Low Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
Low to High Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
t
PHL
t
PLH
t
PHL
t
PLH
890
912
324
1280
ns
Transition Times:
Fall Time; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Rise Time; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Fall Time; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
Rise Time; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
t
f
t
r
t
f
t
r
2086
708
556
725
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NUD3124DMT1G 功能描述:MOSFET 28V Industrial Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NUD3124DMT1G/H 制造商:ON Semiconductor 功能描述:
NUD3124DMT1G-CUT TAPE 制造商:ON 功能描述:NUD Series 12 V 150 mA SMT Automotive Inductive Load Driver - SC-74
NUD3124LT1 功能描述:MOSFET 28V Industrial Relay RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NUD3124LT1G 功能描述:MOSFET 28V Industrial Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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