參數(shù)資料
型號(hào)： NUD3112
廠商： ON SEMICONDUCTOR
英文描述： Integrated Relay, Inductive Load Driver
中文描述： 綜合繼電器，感性負(fù)載驅(qū)動(dòng)程序
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 62K
代理商： NUD3112
NUD3112
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Symbol
Rating
Value
Unit
V
DSS
Drain to Source Voltage – Continuous
14
V
dc
V
GS
Gate to Source Voltage – Continuous
6
V
dc
I
D
Drain Current – Continuous
500
mA
E
z
Single Pulse DraintoSource Avalanche Energy (
T
Jinitial =
25
°
C)
50
mJ
T
J
Junction Temperature
150
°
C
T
A
Operating Ambient Temperature
40 to 85
°
C
T
stg
Storage Temperature Range
65 to +150
°
C
P
D
Total Power Dissipation (Note 1)
Derating Above 25
°
C
SOT23
225
1.8
mW
mW/
°
C
P
D
Total Power Dissipation (Note 1)
Derating Above 25
°
C
SC74
380
3.0
mW
mW/
°
C
R
JA
Thermal Resistance JunctiontoAmbient (Note 1)
SOT23
SC74
556
329
°
C/W
ESD
Human Body Model (HBM) According to EIA/JESD22/A114
2000
V
1. Mounted onto minimum pad board.
TYPICAL ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
BRDSS
Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA)
14
16
17
V
B
VGSO
I
g
= 1.0 mA
8
V
I
DSS
Drain to Source Leakage Current
(V
DS
= 12 V , V
GS
= 0 V, T
A
= 25
°
C)
(V
DS
= 12 V, V
GS
= 0 V, T
A
= 85
°
C)
20
40
A
I
GSS
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V)
35
65
A
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
A
= 85
°
C)
0.8
0.8
1.2
1.4
1.4
V
R
DS(on)
Drain to Source OnResistance
(I
D
= 250 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 5.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V, T
A
=85
°
C)
(I
D
= 500 mA, V
GS
= 5.0 V, T
A
=85
°
C)
1.2
1.3
0.9
1.3
0.9
I
DS(on)
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
A
= 85
°
C)
300
200
400
mA
g
FS
Forward Transconductance
(V
OUT
= 12.0 V, I
OUT
= 0.25 A)
350
490
mmhos
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NUD3112DMT1G 功能描述:MOSFET 12V Industrial Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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