參數(shù)資料
型號： NTR4003N
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
封裝： LEAD FREE, CASE 318-08, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 61K
代理商： NTR4003N
NTR4003N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
40
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 30 V
T
J
= 25
°
C
1.0
A
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
10 V
±
1.0
A
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
0.8
1.4
V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
3.4
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.0 V, I
D
= 10 mA
1.0
1.5
V
GS
= 2.5 V, I
D
= 10 mA
1.5
2.0
Forward Transconductance
g
FS
V
DS
= 3.0 V, I
D
= 10 mA
0.33
S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 5.0 V
21
pF
Output Capacitance
C
oss
19.7
Reverse Transfer Capacitance
C
rss
8.1
Total Gate Charge
Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 24 V,
I
D
= 0.1 A
1.15
nC
Threshold Gate Charge
Q
G(TH)
0.15
GatetoSource Gate Charge
Q
GS
0.32
GatetoDrain Charge
Q
GD
0.23
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
V
GS
= 4.5 V, V
DD
= 5.0 V,
I
D
= 0.1 A, R
G
= 50
16.7
ns
Rise Time
t
r
47.9
TurnOff Delay Time
t
d(off)
65.1
Fall Time
t
f
64.2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 mA
T
J
= 25
°
C
0.65
0.7
V
T
J
= 125
°
C
0.45
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 8A/ s,
I
S
= 10 mA
14
ns
3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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