參數(shù)資料
型號: NTR1P02T3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Power MOSFET
中文描述: 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: MINIATURE, CASE 318-09, TO-236, 3 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 46K
代理商: NTR1P02T3
NTR1P02T1
http://onsemi.com
4
C
iss
GATETOSOURCE OR DRAINTOSOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
C
Q
G
, TOTAL GATE CHARGE (nC)
G
,
R
G
, GATE RESISTANCE ( )
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
,
t
100
1
6
3
1.5
0
1.001
0.401
0.201
0.101
0.001
10
10
300
15
5
0
250
200
150
100
0
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
25
0
1
0.5
1
10
100
2.0E01
4.0E01
3.0E01
5.0E01
7.0E01
50
10
1.5
2
I
D
= 1 A
T
J
= 25
°
C
T
J
= 25
°
C
C
rss
C
oss
C
iss
V
DD
= 15 V
I
D
= 1 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25
°
C
t
r
t
d(off)
t
d(on)
t
f
Q
T
Q
2
Q
1
5
20
C
rss
V
GS
= 0 V
V
DS
= 0 V
V
GS
V
DS
0.301
0.801
0.601
0.501
0.701
0.901
6.0E01
V
GS
V
DS
4.5
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