參數(shù)資料
型號: NTR1P02T1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Power MOSFET
中文描述: 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: MINIATURE, CASE 318-09, TO-236, 3 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 46K
代理商: NTR1P02T1
NTR1P02T1
http://onsemi.com
3
4 V
1
1.25
0.75
2
0.5
0.25
0
1.5
0.275
0.25
0.2
0.15
0.1
0.05
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
D
,
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
D
,
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
T
J
, JUNCTION TEMPERATURE (
°
C)
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
D
,
2.5
1.5
0.5
0
45
10
100
1000
0
1.5
1.25
1
0.5
0.25
0.5
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
0.1
0.45
0.35
0.3
0.2
0.25
0.1
0.05
0.6
1
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Temperature
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
2.5
55
30
5
20
80
130
105
1
4
2
1.5
1
11
3
21
0
2
0.2
0.8
0.6
0.4
1
1.6
1.2
155
2
1.5
2.5
3
3.5
V
DS
10 V
T
J
= 25
°
C
T
J
= 40
°
C
T
J
= 125
°
C
V
GS
= 4.5 V
V
GS
= 0 V
T
J
= 125
°
C
T
J
= 150
°
C
I
D
= 1.5 A
V
GS
= 10 V
V
GS
= 2.5 V
0.8
1.4
3 V
T
J
= 25
°
C
V
GS
= 10 V
T
J
= 25
°
C
T
J
= 40
°
C
T
J
= 150
°
C
1
1
0.75
1.75
3.5 V
4.5 V
1.75
1.25
0.75
0.25
2.25
1.75
0.5
0.4
0.7
0.9
0.15
0.2
0.3
0.4
T
J
= 25
°
C
T
J
= 150
°
C
T
J
= 40
°
C
0.075
0.125
0.225
0.175
1
2
5
7
9
13
15
17
19
相關PDF資料
PDF描述
NTR1P02LT1 Power MOSFET
NTR1P02LT1G Power MOSFET
NTR1P02LT3 Power MOSFET
NTR1P02LT3G Power MOSFET
NTR1P02T3 Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
NTR1P02T1G 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTR1P02T1G 制造商:ON Semiconductor 功能描述:TRANSISTORMOSFETP-CHANNEL20V V(BR)DSS 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 1A SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS
NTR1P02T1G-CUT TAPE 制造商:ON 功能描述:NTR Series P-Channel 20 V 148 mOhm 440 mW Surface Mount Power MOSFET - SOT-23
NTR1P02T3 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTR1P02T3G 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube