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參數(shù)資料
| 型號(hào)： | NTR0202PLT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package |
| 中文描述： | 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | MINIATURE, CASE 318-09, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 54K |
| 代理商： | NTR0202PLT3 |
NTR0202PL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
= 0 V, I
= 10 A)
(Positive Temperature Coefficient)
V
(BR)DSS
20
33
V
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 V, V
GS
= 0 V, T
J
= 25
°
C)
(V
DS
= 20 V, V
GS
= 0 V, T
J
= 150
°
C)
I
DSS
1.0
10
A
GateBody Leakage Current (V
GS
=
±
20 V, V
DS
= 0 V)
I
GSS
±
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
= V
, I
= 250 A)
(Negative Temperature Coefficient)
V
GS(th)
1.1
1.9
3.0
2.3
V
mV/
°
C
Static DraintoSource OnResistance
(V
GS
= 10 V, I
D
= 200 mA)
(V
GS
= 4.5 V, I
D
= 50 mA)
R
DS(on)
0.55
0.80
0.80
1.10
Forward Transconductance
(V
DS
= 10 V, I
D
= 200 mA)
g
fs
0.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
70
pF
Output Capacitance
(V
DS
= 5.0 V, V
GS
= 0 V,
F = 1.0 MHz)
C
oss
74
Reverse Transfer Capacitance
C
rss
26
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(on)
3.0
ns
Rise Time
(V
DD
= 15
V, I
D
= 200 mA,
V
GS
= 10 V, R
G
= 6.0 )
t
r
6.0
TurnOff Delay Time
t
d(off)
18
Fall Time
t
f
4
Total Gate Charge
Q
TOT
2.18
nC
GateSource Charge
(V
DS
= 15
V, I
D
= 200 mA,
V
GS
= 10 V)
Q
GS
0.41
GateDrain Charge
Q
GD
0.40
BODYDRAIN DIODE CHARACTERISTICS
(Note 2)
Diode Forward Voltage (Note 2)
(I
S
= 400 mA, V
GS
= 0 V)
(I
S
= 400 mA, V
GS
= 0 V, T
J
= 150
°
C)
V
SD
0.8
0.65
1.0
V
Reverse Recovery Time
t
rr
11.8
ns
(I
S
= 1.0 A, V
GS
= 0 V,
dI
/dt = 100 A/ s)
S
t
a
9
t
b
3
Reverse Recovery Stored Charge
(I
S
= 1.0 A, V
GS
= 0 V,
dI
S
/dt = 100 A/ s)
Q
RR
0.007
C
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
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