參數(shù)資料
型號(hào)： NTP52N10D
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 52 Amps, 100 Volts
中文描述： 功率MOSFET五十二安培，100伏特
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 72K
代理商： NTP52N10D
NTP52N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
160
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
=25
°
C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
=125
°
C)
I
DSS
5.0
50
μ
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
2.92
8.75
4.0
Vdc
mV/
°
C
Static DraintoSource OnState Resistance
(V
GS
= 10 Vdc, I
D
= 26 Adc)
(V
GS
= 10 Vdc, I
D
= 26 Adc, T
J
= 125
°
C)
R
DS(on)
0.023
0.050
0.030
0.060
DraintoSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 52 Adc)
V
DS(on)
1.25
1.45
Vdc
Forward Transconductance (V
DS
= 26 Vdc, I
D
= 10 Adc)
g
FS
31
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
2250
3150
pF
Output Capacitance
C
oss
620
860
Transfer Capacitance
C
rss
135
265
SWITCHING CHARACTERISTICS
(Notes 2. & 3.)
TurnOn Delay Time
t
d(on)
15
25
ns
Rise Time
= 80 Vdc, I
= 52 Adc,
(V
DD
D
52 Adc,
V
GS
= 10 Vdc, R
G
= 9.1
)
t
r
95
180
TurnOff Delay Time
t
d(off)
74
150
Fall Time
t
f
100
190
Gate Charge
(V
DS
= 80 Vdc, I
D
= 52 Adc,
= 10 Vdc)
V
GS
Q
tot
72
135
nC
Q
gs
13
Q
gd
37
BODYDRAIN DIODE RATINGS
(Note 2.)
Diode Forward OnVoltage
(I
S
= 52 Adc, V
GS
= 0 Vdc)
(I
S
= 52 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
1.06
0.95
1.5
Vdc
Reverse Recovery Time
(I
S
= 52 Adc, V
GS
= 0 Vdc,
di
S
/dt = 100 A/
μ
s)
V
t
rr
148
ns
t
a
106
t
b
42
Reverse Recovery Stored Charge
2. Indicates Pulse Test: P.W. = 300
μ
s Max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
Q
RR
0.66
μ
C
相關(guān)PDF資料
PDF描述
NTP75N03-006 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220(75A,30V,N通道，TO-220封裝的功率MOSFET)
NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK
NTB75N03-06T4 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK
NTB75N03L09G Power MOSFET
NTP75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220(75A,30V,N通道，TO-220封裝的功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTP52N10G 功能描述:MOSFET 100V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP5404N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220
NTP5404NRG 功能描述:MOSFET NFET TO220 40V 136A 3.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP5411NG 功能描述:MOSFET 75A, 60V, 10mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP5412NG 功能描述:MOSFET 60A, 60V, 10mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*