參數(shù)資料
型號： NTP4302
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： CONNECTOR ACCESSORY
中文描述： 74 A, 30 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 71K
代理商： NTP4302
NTP4302, NTB4302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
25
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
10
μ
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.9
3.8
3.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 37 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 10 Adc)
R
DS(on)
6.8
6.8
9.5
9.3
9.3
12.5
m
Forward Transconductance (Note 3) (V
DS
= 10 Vdc, I
D
= 20 Adc)
g
FS
40
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
2050
2400
pF
Output Capacitance
C
oss
640
800
Transfer Capacitance
C
rss
225
310
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
10
18
ns
Rise Time
= 24 Vdc, I
= 20 Adc,
(V
DD
D
20 Adc,
V
GS
= 10 Vdc, R
G
= 2.5
) (Note 3)
t
r
22
35
TurnOff Delay Time
t
d(off)
45
75
Fall Time
t
f
35
70
TurnOn Delay Time
t
d(on)
18
ns
Rise Time
= 24 Vdc, I
= 10 Adc,
(V
DD
D
10 Adc,
V
GS
= 4.5 Vdc, R
G
= 2.5
) (Note 3)
t
r
70
TurnOff Delay Time
t
d(off)
32
Fall Time
t
f
30
Gate Charge
(V
DS
= 24 Vdc, I
D
= 37 Adc,
V
GS
= 4.5 Vdc) (Note 3)
Q
T
28
nC
Q
gs
7.5
Q
gd
19
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.90
0.75
1.3
Vdc
Reverse Recovery Time
(I
S
= 20 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
μ
s) (Note 3)
V
t
rr
37
ns
t
a
21
t
b
16
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
Q
RR
0.035
μ
C
相關(guān)PDF資料
PDF描述
NTB4302 Power MOSFET 74 Amps, 30 Volts
NTB4302T4 Power MOSFET 74 Amps, 30 Volts
NTP52N10 Power MOSFET 52 Amps, 100 Volts
NTP52N10D Power MOSFET 52 Amps, 100 Volts
NTP75N03-006 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220(75A,30V,N通道，TO-220封裝的功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTP4302G 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP-4401 制造商:Quest Tech. 功能描述:Connector Accessories 4 POS RJ-11 Wall Plate Ivory
NTP-4402 制造商:Quest Tech. 功能描述:Connector Accessories 4 POS RJ-11 Wall Plate White
NTP-4403 制造商:Quest Technology International Inc 功能描述:
NTP45N06 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*