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參數(shù)資料
| 型號(hào)： | NTMFS4833N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 191 A(30V, 191A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，191甲（30V的，191A條，功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | NTMFS4833N |
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 2
1
Publication Order Number:
NTMFS4833N/D
NTMFS4833N
Power MOSFET
30 V, 191 A, Single NChannel, SO8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices*
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
V
GatetoSource Voltage
V
GS
±
20
V
Continuous Drain
Current R
JA
(Note 1)
Steady
State
T
A
= 25
°
C
I
D
26
A
T
A
= 85
°
C
19
Power Dissipation
R
JA
(Note 1)
T
A
= 25
°
C
P
D
2.35
W
Continuous Drain
Current R
JA
(Note 2)
T
A
= 25
°
C
ID
16
A
T
A
= 85
°
C
12
Power Dissipation
R
JA
(Note 2)
T
A
= 25
°
C
P
D
0.91
W
Continuous Drain
Current R
JC
(Note 1)
T
C
= 25
°
C
I
D
191
A
T
C
= 85
°
C
138
Power Dissipation
R
JC
(Note 1)
T
C
= 25
°
C
P
D
125
W
Pulsed Drain
Current
T
A
= 25
°
C,
t
p
= 10 s
I
DM
288
A
Operating Junction and Storage
Temperature
T
J
, T
STG
55 to
+150
°
C
Source Current (Body Diode)
I
S
104
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse DraintoSource Avalanche
Energy (T
J
= 25
°
C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 35 A
pk
, L = 1.0 mH, R
G
= 25
EAS
612.5
mJ
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
T
L
260
°
C
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
http://onsemi.com
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
1
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
2.0 m @ 10 V
191 A
3.0 m @ 4.5 V
G (4)
S (1,2,3)
NCHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4833NT1G
SO8 FL
(PbFree)
1500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTMFS4833NT3G
SO8 FL
(PbFree)
5000/Tape & Reel
4833N
AYWW
S
S
S
G
D
D
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMFS4833NAT1G | 制造商:ON Semiconductor 功能描述:NFET SO8FL 30V 191A 2MOHM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET SO8FL 30V 191A 2MOHM |
| NTMFS4833NST1G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4833NST3G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4833NT1G | 功能描述:MOSFET NFET 30V 191A 2MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4833NT1G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 30V 191A DFN5 |
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