參數(shù)資料
型號(hào): NTJD4001NT1
廠商: ON SEMICONDUCTOR
元件分類(lèi): 小信號(hào)晶體管
英文描述: Small Signal MOSFET
中文描述: 250 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: CASE 419B-02, SC-88, SC-70, 6 PIN
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 46K
代理商: NTJD4001NT1
NTJD4001N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
0
0.2
0.1
1.2
0.4
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
D
0.06
0.02
0
Figure 1. OnRegion Characteristics
1.2
2
1.6
2.2
0.1
0.06
0.02
1.4
0
1
Figure 2. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0.5
0.25
Figure 3. OnResistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
D
D
I
D
D
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
50
0
25
25
1.4
1.2
1
0.8
0
50
125
100
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
1.25
T
J
= 55
°
C
T
J
= 125
°
C
75
150
I
D
= 0.01 A
V
GS
= 10 V
R
D
D
R
0.8
25
°
C
2
1.5 V
0.005
0.205
Figure 6. DraintoSource Leakage Current
vs. Voltage
1.75 V
2 V
2.5 V
2
1.6
V
DS
= 5 V
0.75
V
GS
= 2.75 V
V
GS
= 10 V to 3 V
0.04
0.08
0.12
0.08
0.04
1.8
T
J
= 125
°
C
V
GS
= 10 V
T
J
= 55
°
C
T
J
= 25
°
C
1.0
1.8
1.6
0
30
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
10000
10
I
D
,
1000
100
10
15
T
J
= 150
°
C
T
J
= 125
°
C
5
V
GS
= 0 V
0.055
0.105
0.155
0.5
0.25
I
D,
DRAIN CURRENT (AMPS)
R
D
D
1.25
0.005
0.205
0.75
V
GS
= 10 V
T
J
= 25
°
C
1.0
0.055
0.105
0.155
V
GS
= 4.5 V
0.6
0.4
0.2
20
25
0.18
0.16
0.14
2.25 V
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