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參數(shù)資料
| 型號： | NTJD4001N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal MOSFET 30 V, 250 mA(30V, 250mA, 小信號MOSFET) |
| 中文描述： | 250 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 419B-02, SC-88, SC-70-6, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NTJD4001N |
NTJD4001N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
56
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 30 V
1.0
A
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
10
V
±
1.0
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 100 A
0.8
1.2
1.5
V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
3.2
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.0
V, I
D
= 10 mA
1.0
1.5
V
GS
= 2.5
V, I
D
= 10 mA
1.5
2.5
Forward Transconductance
g
FS
V
DS
= 3.0
V, I
D
= 10 mA
80
mS
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 5.0
V
20
33
pF
Output Capacitance
C
OSS
19
32
Reverse Transfer Capacitance
C
RSS
7.25
12
Total Gate Charge
Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 24
V,
I
D
= 0.1
A
0.9
1.3
nC
Threshold Gate Charge
Q
G(TH)
0.2
GatetoSource Charge
Q
GS
0.3
GatetoDrain Charge
Q
GD
0.2
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
td
(ON)
V
GS
= 4.5
V, V
DD
= 5.0
V,
I
D
= 10 mA, R
G
= 50
17
ns
Rise Time
tr
23
TurnOff Delay Time
td
(OFF)
94
Fall Time
tf
82
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
T
J
= 25
°
C
0.65
0.7
V
T
J
= 125
°
C
0.45
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 8.0 A/ s,
I
S
= 10 mA
12.4
ns
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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