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參數(shù)資料
| 型號： | NTHS5404T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET |
| 中文描述： | 5200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | NTHS5404T1G |
NTHS5404
http://onsemi.com
5
Figure 12. Basic
Figure 13. Style 1
0.178
0.007
2.032
0.08
1.727
0.068
0.66
0.026
0.711
0.028
0.457
0.018
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 12. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
The minimum recommended pad pattern shown in
Figure 13 improves the thermal area of the drain
connections (pins 1, 2, 3, 6, 7, 8) while remaining within the
confines of the basic footprint. The drain copper area is
0.0054 sq. in. (or 3.51 sq. mm). This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
相關PDF資料 |
PDF描述 |
|---|---|
| NTHS5445T1 | Power MOSFET P-Channel 5.2 A, 8 V(5.2A，8V，P通道的功率MOSFET) |
| NTJD4001NT1 | Small Signal MOSFET |
| NTJD4001NT1G | Small Signal MOSFET |
| NTJD4001N | Small Signal MOSFET 30 V, 250 mA(30V, 250mA, 小信號MOSFET) |
| NTJS4405N | Small Signal MOSFET 25 V, 1.2 A(25V, 1.2A, 小信號MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTHS5404T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTHS5441 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:−20 V, −5.3 A, P−Channel ChipFET |
| NTHS5441PT1G | 功能描述:MOSFET CHIPFETS 20V .055 TR PFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHS5441T1 | 功能描述:MOSFET -20V -5.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHS5441T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET P-Channel ChipFET |
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