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參數(shù)資料
| 型號(hào)： | NTHS2101PT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | −8.0 V, −7.5 A P−Channel ChipFET |
| 中文描述： | 5.4 A, 8 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | NTHS2101PT1G |
NTHS2101P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 2)
Temperature Coefficient (Positive)
V
(Br)DSS
V
GS
= 0 V
dc
, I
D
= 250 A
dc
8.0
V
dc
GateBody Leakage Current Zero
I
GSS
V
DS
= 0 V
dc
, V
GS
=
8.0 V
dc
100
nA
dc
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 6.4 V
dc
, V
GS
= 0 V
dc
V
DS
= 6.4 V
dc
, V
GS
= 0 V
dc
,
T
J
= 85
°
C
1.0
5.0
A
dc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
dc
0.45
1.5
V
dc
Static DraintoSource OnResistance
R
DS(on)
V
GS
= 4.5 V
dc
, I
D
= 5.4 A
dc
V
GS
= 2.5 V
dc
, I
D
= 4.5 A
dc
V
GS
= 1.8 V
dc
, I
D
= 2.0 A
dc
19
25
34
25
36
48
m
Forward Transconductance
g
FS
V
DS
= 5.0 V
dc
, I
D
= 5.2 A
dc
20
S
Diode Forward Voltage
V
SD
I
S
= 1.1 A
dc
, V
GS
= 0 V
dc
0.62
1.2
V
DYNAMIC CHARACTERISTIC
Input Capacitance
C
iss
V
DS
= 6.4 V
dc
V
GS
= 0 V
f = 1 0 MHz
f = 1.0 MHz
2400
pF
Output Capacitance
C
oss
550
Transfer Capacitance
C
rss
420
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(on)
V
DD
= 6.4 V
dc
V
GS
= 4.5 V
dc
= 5 4 A
I
D
= 5.4 A
dc
R
G
= 2.0 (Note 2)
7.0
ns
Rise Time
t
r
28
TurnOff Delay Time
t
d(off)
73
Fall Time
t
f
60
Gate Charge
Q
G
V
GS
= 4.5 V
dc
I
= 5.4 A
D
V
DS
= 6.4 V
dc
15
30
nC
Q
GS
4.0
Q
GD
dc
8.0
SourceDrain Reverse Recovery Time
T
rr
I
F
= 1.1 A, di/dt = 100 A/ s
90
ns
2. Pulse Test: Pulse Width = 250 s, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
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