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參數(shù)資料
| 型號(hào)： | NTHD5905T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET Dual P-Channel 3.0 A, 8 V(3.0A，8V，雙P通道的功率MOSFET) |
| 中文描述： | 3000 mA, 8 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CHIPFET-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | NTHD5905T1 |
NTHD5905T1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2)
t
5 sec
Steady State
R
thJA
50
90
60
110
°
C/W
Maximum Junction–to–Foot (Drain)
Steady State
R
thJF
30
40
°
C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.45
–
–
V
Gate–Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8.0 V
–
–
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –6.4 V, V
GS
= 0 V
–
–
–1.0
A
V
DS
= –6.4 V, V
GS
= 0 V,
T
J
= 85
°
C
–
–
–5.0
On–State Drain Current (Note 3)
I
D(on)
V
DS
–5.0 V, V
GS
= –4.5 V
–10
–
–
A
Drain–Source On–State Resistance (Note 3)
r
DS(on)
V
GS
= –4.5 V, I
D
= –3.0 A
–
0.075
0.090
V
GS
= –2.5 V, I
D
= –2.5 A
–
0.110
0.130
V
GS
= –1.8 V, I
D
= –1.0 A
–
0.150
0.180
Forward Transconductance (Note 3)
g
fs
V
DS
= –5.0 V, I
D
= –3.0 A
–
7.0
–
S
Diode Forward Voltage (Note 3)
V
SD
I
S
= –0.9 A, V
GS
= 0 V
–
–0.8
–1.2
V
Dynamic
(Note 4)
Total Gate Charge
Q
g
V
DS
= –4.0 V, V
GS
= –4.5 V,
I
D
= –3.0 A
4 0 V V
4 5 V
–
5.5
9.0
nC
Gate–Source Charge
Q
gs
–
0.5
–
Gate–Drain Charge
Q
gd
–
1.5
–
Turn–On Delay Time
t
d(on)
–
10
15
ns
Rise Time
t
r
V
DD
= –4.0 V, R
L
= 4
–1 0 A V
= –4 5 V
–1.0 A, V
GEN
= –4.5 V,
= 6
R
G
6
I
D
–
45
70
Turn–Off Delay Time
t
d(off)
–
30
45
Fall Time
t
f
–
10
15
Source–Drain Reverse Recovery Time
2. Surface Mounted on 1
″
x 1
″
FR4 Board.
3. Pulse Test: Pulse Width
4. Guaranteed by design, not subject to production testing.
t
rr
I
F
= –0.9 A, di/dt = 100 A/ s
–
30
60
300 s, Duty Cycle
2%.
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