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參數(shù)資料
| 型號： | NTHD4508NT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| 中文描述： | 3.1 A, 20 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 55K |
| 代理商： | NTHD4508NT1G |
NTHD4508N
http://onsemi.com
5
Figure 11. Basic
Figure 12. Style 2
0.457
0.018
0.08
0.635
0.025
0.66
0.026
0.254
0.010
mm
inches
SCALE 20:1
1.032
0.043
0.178
0.007
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINTS*
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 11. This is sufficient for low power dissipation
MOSFET
applications,
but
performance requires a greater copper pad area, particularly
for the drain leads.
The minimum recommended pad pattern shown in Figure
12 improves the thermal area of the drain connections (pins
5, 6, 7, 8) while remaining within the confines of the basic
power
semiconductor
footprint. The drain copper area is 0.0019 sq. in. (or 1.22 sq.
mm). This will assist the power dissipation path away from
the device (through the copper leadframe) and into the
board and exterior chassis (if applicable) for the single
device. The addition of a further copper area and/or the
addition of vias to other board layers will enhance the
performance still further.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHD4N02 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4N02F | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4N02FT1 | 功能描述:MOSFET 20V 3.9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4N02FT1G | 功能描述:MOSFET 20V 3.9A N-Channel w/3.7A Schottky RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4P02 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
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