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參數(shù)資料
| 型號(hào)： | NTE78 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶體管射頻輸出功率 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | NTE78 |
NTE78
Silicon NPN Transistor
RF Power Output
Description:
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power
amplifiers in HF band mobile radio applications.
Features:
High Power Gain
Emitter Ballasted Construction for High Reliability and Good Performance
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (R
BE
= 10
), V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75V
75V
5V
4A
1.5W
12.5W
+150
°
C
–55
°
to +150
°
C
83
°
C/W
10
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter–Base Breakdown Voltage
V
(BR)EBO
V
(BR)CBO
V
(BR)CER
I
CBO
I
EBO
h
FE
P
O
I
E
= 1mA, I
C
= 0
I
C
= 1mA, I
E
= 0
I
C
= 10mA, R
BE
= 10
V
CB
= 30V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 100mA, Note 1
V
CC
= 12V, P
in
= 250mW, f =
27MHz
5
–
–
V
Collector–Base Breakdown Voltage
75
–
–
V
Collector–Emitter Breakdown Voltage
75
–
–
V
μ
A
μ
A
Collector Cutoff Current
–
–
100
Emitter Cutoff Current
–
–
100
DC Forward Current Gain
35
70
180
Output Power
6.0
7.5
–
W
Collector Efficiency
η
C
55
60
–
%
Note 1. Pulse test: Pulse Width = 150
μ
s, Duty Cycle = 5%.
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